scholarly journals Peculiarities of emission characteristics of semiconductor optical amplifier with multiple quantum wells

2003 ◽  
Author(s):  
Di-Ku Yu ◽  
Gagik S. Shmavonyan ◽  
Yi-Shin Su ◽  
Ching-Fuh Lin
Keyword(s):  
Quantum Wells ◽  
Semiconductor Optical Amplifier ◽  
Optical Amplifier ◽  
Multiple Quantum Wells ◽  
Emission Characteristics ◽  
Multiple Quantum

Reduced Recovery Time Semiconductor Optical Amplifier Using p-Type-Doped Multiple Quantum Wells

2006 ◽  
Vol 18 (22) ◽  
pp. 2323-2325 ◽  
Author(s):  
L. Zhang ◽  
I. Kang ◽  
A. Bhardwaj ◽  
N. Sauer ◽  
S. Cabot ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Semiconductor Optical Amplifier ◽  
Recovery Time ◽  
Optical Amplifier ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
P Type

Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence

1998 ◽  
Vol 73 (25) ◽  
pp. 3689-3691 ◽  
Author(s):  
T. J. Schmidt ◽  
S. Bidnyk ◽  
Yong-Hoon Cho ◽  
A. J. Fischer ◽  
J. J. Song ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Density Dependence ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Excitation Density ◽  
Emission Characteristics ◽  
Multiple Quantum

scholarly journals Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Dengkui Wang ◽  
Xian Gao ◽  
Jilong Tang ◽  
Xuan Fang ◽  
Dan Fang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Blue Shift ◽  
Multiple Quantum Wells ◽  
Emission Characteristics ◽  
Multiple Quantum ◽  
Interfacial Diffusion ◽  
Exciton Emission

AbstractRapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs0.92Sb0.08/Al0.3Ga0.7As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted through strain and interfacial diffusion via rapid thermal annealing. The light-hole (LH) exciton emission and the heavy-hole (HH) exciton emission are observed at room temperature. After annealing, the LH and HH emission peaks have blue shift. It can be ascribed to the variation of interfacial strain at low annealing temperature and the interfacial diffusion between barrier layer and well layer at high annealing temperature. This work is of great significance for emission adjustment of strained multiple quantum wells.

FEMTOSECOND SPECTRAL HOLE-BURNING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Multiple Quantum ◽  
Spectral Hole

FAR INFRARED MAGNETO-ABSORPTION STUDY OF BARRIER IMPURITIES AND SCREENING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-239-C5-242 ◽  
Author(s):  
E. GLASER ◽  
B. V. SHANABROOK ◽  
R. J. WAGNER ◽  
R. L. HAWKINS ◽  
W. J. MOORE ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Far Infrared ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Absorption Study

Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars

2012 ◽  
Vol 100 (26) ◽  
pp. 261103 ◽  
Author(s):  
J.-R. Chang ◽  
S.-P. Chang ◽  
Y.-J. Li ◽  
Y.-J. Cheng ◽  
K.-P. Sou ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Luminescent Properties ◽  
Multiple Quantum Wells ◽  
Core Shell ◽  
Multiple Quantum
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