GaN single-crystal films on silicon substrates grown by MOVPE

1991 ◽  
Author(s):  
Takao Nagatomo ◽  
Ichiro Ochiai ◽  
Shigeo Ookoshi ◽  
Osamu Omoto
Keyword(s):  
Single Crystal ◽  
Silicon Substrates ◽  
Single Crystal Films ◽  
Crystal Films

GaN single crystal films on silicon substrates grown by MOVPE

Vacuum ◽  
1991 ◽  
Vol 42 (16) ◽  
pp. 1069-1070
Author(s):  
Takao Nagatomo ◽  
Ichiro Ochiai ◽  
Shigeo Ookoshi ◽  
Osamu Omoto
Keyword(s):  
Single Crystal ◽  
Silicon Substrates ◽  
Single Crystal Films ◽  
Crystal Films

Some Fundamental Aspects of the Thin Film Organization and Device – Structure Fabrication of Polydiacetylenes

1987 ◽  
Vol 109 ◽  
Author(s):  
M. Thakur ◽  
B. Verbeek ◽  
G. C. Chi ◽  
K. J. O'BRIEN
Keyword(s):  
Single Crystal ◽  
Logic Gates ◽  
Optical Quality ◽  
Molecular Organization ◽  
Silicon Substrates ◽  
Device Structure ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Device Applications ◽  
First Time

ABSTRACTThe utility of the Shear method in obtaining thin single crystal films of polydiacetylenes has been demonstrated previously. In this paper the principles of the Shear method are elucidated with analogy to the well-known L-B method. Both the methods, L-B and Shear, utilize the polar molecular interactions with the substrates as a control parameter for the molecular organization. The major difference between the two is that one (L-B) utilizes a liquid as the subphase while the other (Shear) uses solid substrates. Because of the nature of the interface the L-B approach leads to only one-dimensional organization and poor optical quality for the films while the Shear method provides 3-D organization and excellent optical quality.Thin single crystal films of a specific polydiacetylene, PTS, are prepared on oxide coated silicon substrates by the Shear method. Waveguiding through the PTS films is demonstrated for the first time. Much progress is also made in the waveguide-structural fabrication of PTS films. The results are quite encouraging in terms of device applications of polydiacetylenes as optical switches and logic gates.

Structure of Palladium Single-Crystal Films Prepared by Flash Evaporation onto (001) NaCl Substrates

1970 ◽  
Vol 28 ◽  
pp. 456-457
Author(s):  
L. E. Murr ◽  
G. Wong
Keyword(s):  
Single Crystal ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
High Rate ◽  
Flash Evaporation ◽  
Optimum Load ◽  
Single Crystal Films ◽  
Crystal Films ◽  
A Current

Palladium single-crystal films have been prepared by Matthews in ultra-high vacuum by evaporation onto (001) NaCl substrates cleaved in-situ, and maintained at ∼ 350° C. Murr has also produced large-grained and single-crystal Pd films by high-rate evaporation onto (001) NaCl air-cleaved substrates at 350°C. In the present work, very large (∼ 3cm2), continuous single-crystal films of Pd have been prepared by flash evaporation onto air-cleaved (001) NaCl substrates at temperatures at or below 250°C. Evaporation rates estimated to be ≧ 2000 Å/sec, were obtained by effectively short-circuiting 1 mil tungsten evaporation boats in a self-regulating system which maintained an optimum load current of approximately 90 amperes; corresponding to a current density through the boat of ∼ 4 × 104 amperes/cm2.

The P-H-T effects on the electric resistance and magnetoresistance of La0.7Sr0.1Pb0.2MnO3 single crystal films

2001 ◽  
Vol 27 (6) ◽  
pp. 451-453 ◽  
Author(s):  
S. S. Kucherenko ◽  
V. P. Pashchenko ◽  
P. I. Polyakov ◽  
S. I. Khartsev ◽  
V. A. Shtaba
Keyword(s):  
Single Crystal ◽  
Electric Resistance ◽  
Single Crystal Films ◽  
Crystal Films

Thermal stability of indium nitride single crystal films

1993 ◽  
Vol 73 (11) ◽  
pp. 7969-7971 ◽  
Author(s):  
Qixin Guo ◽  
Osamu Kato ◽  
Akira Yoshida
Keyword(s):  
Thermal Stability ◽  
Single Crystal ◽  
Indium Nitride ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Thermal Stability Of
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