Solar-blind AlGaN-based UV photodetectors grown on Si (111) substrates

2002 ◽  
Author(s):  
Jose L. Pau ◽  
Elias Munoz Merino ◽  
Miguel A. Sanchez-Garcia ◽  
Enrico Calleja
Keyword(s):  
Uv Photodetectors ◽  
Solar Blind

Highly selective ozone-treated β-Ga2O3 solar-blind deep-UV photodetectors

2020 ◽  
Vol 117 (26) ◽  
pp. 261101
Author(s):  
Suhyun Kim ◽  
Jihyun Kim
Keyword(s):  
Uv Photodetectors ◽  
Solar Blind ◽  
Deep Uv

High-speed solar-blind UV photodetectors using high-Al content Al0.64Ga0.36N/Al0.34Ga0.66N multiple quantum wells

2016 ◽  
Vol 10 (1) ◽  
pp. 011004 ◽  
Author(s):  
Sakib Muhtadi ◽  
Seong Mo Hwang ◽  
Antwon L. Coleman ◽  
Alexander Lunev ◽  
Fatima Asif ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Speed ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Uv Photodetectors ◽  
Al Content ◽  
Solar Blind ◽  
High Al Content

High performance UV light photodetectors based on Sn-nanodot-embedded SnO2 nanobelts

2015 ◽  
Vol 3 (20) ◽  
pp. 5253-5258 ◽  
Author(s):  
Yang Huang ◽  
Jing Lin ◽  
Liang Li ◽  
Lulu Xu ◽  
Weijia Wang ◽  
...  
Keyword(s):  
High Performance ◽  
Uv Light ◽  
Building Blocks ◽  
Uv Photodetectors ◽  
Solar Blind ◽  
Sno2 Nanobelts

Sn-nanodot-embedded SnO2 nanobelts are promising as building blocks for high performance solar-blind UV photodetectors.

Epitaxial (110)-oriented Cubic MgZnO Films on m-plane Sapphire for Solar-blind UV Photodetectors

2014 ◽  
Vol 35 (6) ◽  
pp. 678-683
Author(s):  
郑剑 ZHENG Jian ◽  
张振中 ZHANG Zhen-zhong ◽  
张吉英 ZHANG Ji-ying ◽  
刘益春 LIU Yi-chun ◽  
王双鹏 WANG Shuang-peng ◽  
...  
Keyword(s):  
Uv Photodetectors ◽  
Solar Blind

ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors

2018 ◽  
Vol 205 ◽  
pp. 502-507 ◽  
Author(s):  
M. Pavesi ◽  
F. Fabbri ◽  
F. Boschi ◽  
G. Piacentini ◽  
A. Baraldi ◽  
...  
Keyword(s):  
Uv Photodetectors ◽  
Solar Blind

scholarly journals Solar-blind ultraviolet detection based on TiO2 nanoparticles decorated graphene field-effect transistors

Nanophotonics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 899-908 ◽  
Author(s):  
Shasha Li ◽  
Tao Deng ◽  
Yang Zhang ◽  
Yuning Li ◽  
Weijie Yin ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Nanowire Array ◽  
Total Power ◽  
Gate Bias ◽  
Uv Photodetector ◽  
Uv Photodetectors ◽  
Solar Blind ◽  
Drain Bias

AbstractSensitive solar-blind ultraviolet (UV) photodetectors are important to various military and civilian applications, such as flame sensors, missile interception, biological analysis, and UV radiation monitoring below the ozone hole. In this paper, a solar-blind UV photodetector based on a buried-gate graphene field-effect transistor (GFET) decorated with titanium dioxide (TiO2) nanoparticles (NPs) was demonstrated. Under the illumination of a 325-nm laser (spot size ~2 μm) with a total power of 0.35 μW, a photoresponsivity as high as 118.3 A/W was obtained, at the conditions of zero gate bias and a source-drain bias voltage of 0.2 V. This photoresponsivity is over 600 times higher than that of a recently reported solar-blind UV photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction (0.185 A/W). Experiments showed that the photoresponsivity of the TiO2 NPs decorated GFET photodetectors can be further enhanced by increasing the source-drain bias voltage or properly tuning the gate bias voltage. Furthermore, the photoresponse time of the TiO2 NPs decorated GFET photodetectors can also be tuned by the source-drain bias and gate bias. This study paves a simple and feasible way to fabricate highly sensitive, cost-efficient, and integrable solar-blind UV photodetectors.

Solution Grown Single-Unit-Cell Quantum Wires Affording Self-Powered Solar-Blind UV Photodetectors with Ultrahigh Selectivity and Sensitivity

2019 ◽  
Vol 141 (8) ◽  
pp. 3480-3488 ◽  
Author(s):  
Dong Li ◽  
Simeng Hao ◽  
Guanjie Xing ◽  
Yunchao Li ◽  
Xiaohong Li ◽  
...  
Keyword(s):  
Single Unit ◽  
Quantum Wires ◽  
Unit Cell ◽  
Uv Photodetectors ◽  
Solar Blind ◽  
Self Powered
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