High-density rewritable holographic recording onto photochromic composite media

2002 ◽  
Author(s):  
Igor V. Ciapurin ◽  
Stephan V. Robu ◽  
Oleg Y. Korshak ◽  
Christophe Lafond ◽  
Amir Tork ◽  
...  
Keyword(s):  
High Density ◽  
Holographic Recording ◽  
Composite Media

High Density Recording of 270 Gbit/in.2in a Coaxial Holographic Recording System

2008 ◽  
Vol 47 (7) ◽  
pp. 5891-5894 ◽  
Author(s):  
Kenji Tanaka ◽  
Hidenori Mori ◽  
Masaaki Hara ◽  
Kazuyuki Hirooka ◽  
Atsushi Fukumoto ◽  
...  
Keyword(s):  
Recording System ◽  
High Density ◽  
Holographic Recording ◽  
High Density Recording

Dependence of the high-density holographic recording parameters of photopolymer on sample thickness

Optik ◽  
2002 ◽  
Vol 113 (5) ◽  
pp. 197-200 ◽  
Author(s):  
Mingju Huang ◽  
Huawen Yao ◽  
Zhongyu Chen ◽  
Lisong Hou ◽  
Fuxi Gan
Keyword(s):  
Sample Thickness ◽  
High Density ◽  
Holographic Recording

High density recording on ultra-thin Fe-Pt perpendicular composite media

2000 ◽  
Vol 36 (5) ◽  
pp. 2417-2419 ◽  
Author(s):  
T. Suzuki ◽  
T. Kiya ◽  
N. Honda ◽  
K. Ouchi
Keyword(s):  
High Density ◽  
Composite Media ◽  
High Density Recording

High-density holographic recording parameters under different wavelength of a two dyes-sensitized photopolymer

Optik ◽  
2006 ◽  
Vol 117 (5) ◽  
pp. 231-235 ◽  
Author(s):  
Mingju Huang ◽  
Sulian Wang ◽  
Airong Wang ◽  
Qiaoxia Gong ◽  
Fuxi Gan
Keyword(s):  
High Density ◽  
Holographic Recording

Composite media for high density heat assisted magnetic recording

2016 ◽  
Vol 108 (23) ◽  
pp. 232402 ◽  
Author(s):  
Zengyuan Liu ◽  
Yipeng Jiao ◽  
R. H. Victora
Keyword(s):  
Magnetic Recording ◽  
High Density ◽  
Composite Media ◽  
Heat Assisted Magnetic Recording

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

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