Design of binary data page with a phase mask for high-density holographic recording

Author(s):  
Daisuke Barada ◽  
Shigeo Kawata ◽  
Toyohiko Yatagai
2008 ◽  
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Author(s):  
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Hirosuke Furuta ◽  
Kuniaki Aragane ◽  
Atsushi Okamoto

2002 ◽  
Author(s):  
Igor V. Ciapurin ◽  
Stephan V. Robu ◽  
Oleg Y. Korshak ◽  
Christophe Lafond ◽  
Amir Tork ◽  
...  

1981 ◽  
Vol 20 (2) ◽  
pp. 300 ◽  
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H. J. Gallagher ◽  
T. K. Gaylord ◽  
M. G. Moharam ◽  
C. C. Guest
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2008 ◽  
Vol 47 (7) ◽  
pp. 5891-5894 ◽  
Author(s):  
Kenji Tanaka ◽  
Hidenori Mori ◽  
Masaaki Hara ◽  
Kazuyuki Hirooka ◽  
Atsushi Fukumoto ◽  
...  

Optik ◽  
2002 ◽  
Vol 113 (5) ◽  
pp. 197-200 ◽  
Author(s):  
Mingju Huang ◽  
Huawen Yao ◽  
Zhongyu Chen ◽  
Lisong Hou ◽  
Fuxi Gan

2005 ◽  
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Hongbo Liu ◽  
John Y. Fu ◽  
Yuexin Liu ◽  
Bo Wang ◽  
Chuanyong Huang ◽  
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Optik ◽  
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Vol 117 (5) ◽  
pp. 231-235 ◽  
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Mingju Huang ◽  
Sulian Wang ◽  
Airong Wang ◽  
Qiaoxia Gong ◽  
Fuxi Gan

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S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.


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