New XRMF spectrometer with high resolution and high efficiency using polycapillary x-ray lens and PSPC+

2001 ◽  
Author(s):  
Xunliang Ding ◽  
Yiming Yan ◽  
Qiuli Pan ◽  
Yumei Yan ◽  
Yejun He
Keyword(s):  
High Resolution ◽  
High Efficiency ◽  
X Ray

scholarly journals Bragg Magnifier: High-efficiency, High-resolution X-ray Detector

2007 ◽  
Author(s):  
Marco Stampanoni ◽  
Amela Groso ◽  
Gunther Borchert ◽  
Rafael Abela
Keyword(s):  
High Resolution ◽  
High Efficiency ◽  
X Ray

scholarly journals High Resolution X-ray Spectroscopy: Is It Interesting? Is It Possible?

2005 ◽  
Vol 13 ◽  
pp. 790-792
Author(s):  
Webster Cash
Keyword(s):  
High Resolution ◽  
High Throughput ◽  
Spectral Resolution ◽  
Diffraction Grating ◽  
High Efficiency ◽  
X Ray ◽  
New Science

AbstractThe diffraction grating spectra from Chandra and XMM-Newton have given the astronomical community a huge step forward in x-ray spectroscopy of celestial sources. They have proven the scientific richness of the field. But the spectra have resolution of only 300 to 1000 – low by the standards of the visible and the ultraviolet. We discuss some of the exciting new science that can be addressed if spectral resolution of up to 10,000 (or more) can be achieved in the x-ray. We then show how practical, high efficiency, high resolution x-ray spectrographs can be built for high throughput missions like Constellation-X and XEUS.

scholarly journals New capabilities for `colouring in' the chemistry of crystal defects atom-by-atom

2014 ◽  
Vol 70 (6) ◽  
pp. 521-523
Author(s):  
Sarah J. Haigh
Keyword(s):  
High Resolution ◽  
High Efficiency ◽  
Crystal Defects ◽  
Energy Dispersive ◽  
Acta Cryst ◽  
X Ray ◽  
Elemental Imaging ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Electron Microscopes

The latest generation of scanning transmission electron microscopes equipped with high-efficiency energy-dispersive X-ray detectors are breaking new ground with respect to high-resolution elemental imaging of materials. In this issue, Paulauskaset al.[Acta Cryst.(2014), A70, 524–531] demonstrate impressive results when applying this technique to improve understanding of CdTe dislocation structures.

Use of deep reactive ion etching in the fabrication of high-efficiency high-resolution crystal x-ray analyzers

2002 ◽  
Author(s):  
Bor-Yuan Shew ◽  
Ruey-Shing Huang ◽  
Duan-Jen Wang ◽  
Shen-Yaw Perng ◽  
Chien-Kuang Kuan ◽  
...  
Keyword(s):  
High Resolution ◽  
High Efficiency ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
X Ray

scholarly journals Advances in High-Resolution Studies of the Chemical Effects in the Molybdenum L Heavy-Ion-Induced X-Ray Satellite Emission (HIXSE) Spectra*

1986 ◽  
Vol 30 ◽  
pp. 257-264
Author(s):  
T. M. Rosseel ◽  
J. M. Dale ◽  
L. D. Hulett ◽  
P. L. Pepmiller ◽  
C. R. Vane ◽  
...  
Keyword(s):  
High Resolution ◽  
High Efficiency ◽  
Relative Yield ◽  
Heavy Ion ◽  
Chemical Environment ◽  
Difference Spectra ◽  
Crystal Spectrometer ◽  
X Ray ◽  
Chemical Effects ◽  
Alloys And Compounds

AbstractHigh-resolution measurements of the molybdenum L heavy-ion-induced X-ray satellite emission (HIXSE) spectra of a series of Mo alloys and compounds have been obtained with a new, high-efficiency, high-resolution Bragg crystal spectrometer in the von Hamos geometry. The improved resolution (5 eV at 2.3 keV) is sufficient to reveal the LnMm configuration lines in the Lα and Lβ hypersatellite bands. Both sets of lines exhibit the same trend in the variation of the relative yield distribution with the chemical environment as was observed for KLn lines of lower Z targets. Difference spectra, using elemental molybdenum as a subtrahend, enhance the systematic variation. These results confirm the analysis and conclusions of lower resolution studies. They also indicate a potential for even greater sensitivity to the chemical environment.

Sulphur-Passivated GaAs Investigation Using High Resolution X-Ray Diffractometry

2003 ◽  
Vol 10 (02n03) ◽  
pp. 533-536
Author(s):  
Konstantin Pavlov ◽  
Ian Jamieson ◽  
Greg Jakovidis ◽  
Anatoly Petrakov ◽  
Vasily Punegov
Keyword(s):  
High Resolution ◽  
Dislocation Density ◽  
Interfacial Layer ◽  
High Efficiency ◽  
Interface Layer ◽  
Photovoltaic Devices ◽  
X Ray ◽  
Gaas Wafer ◽  
Highly Strained

The growth of a MoS2 layer on a GaAs(111) substrate produces a highly strained interface layer, which relaxes via generation of dislocations. Using high-resolution X-ray diffractometry in the triple-axis scheme we investigated this interfacial layer, which results from dipping an epi-ready GaAs wafer in ammonium sulphide, followed by deposition of an RF-sputtered MoS2 layer. The dislocation density revealed from the measurements is of the 106 cm-2. This suggests that high efficiency (~20%) MoS2/GaAs heterojunction photovoltaic devices are feasible.

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