Precise interferometric measurements at single-crystal silicon yielding thermal expansion coefficients from 12° to 28°C and compressibility

2001 ◽  
Author(s):  
Rene Schoedel ◽  
Gerhard Boensch
Keyword(s):  
Thermal Expansion ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Thermal Expansion Coefficients ◽  
Expansion Coefficients

Measurement of thermal expansion coefficient of substrate GGG and its epitaxial layer YIG

1999 ◽  
Vol 14 (1) ◽  
pp. 2-4 ◽  
Author(s):  
Rui-sheng Liang ◽  
Feng-chao Liu
Keyword(s):  
Thin Film ◽  
Thermal Expansion ◽  
Single Crystal ◽  
Thermal Expansion Coefficient ◽  
Epitaxial Layer ◽  
Expansion Coefficient ◽  
Linear Thermal Expansion ◽  
New Method ◽  
Thermal Expansion Coefficients ◽  
Expansion Coefficients

A new method is used in measuring the linear thermal expansion coefficients in composite consisting of a substrate Gd3Ga2Ga3O12 (GGG) and its epitaxial layer Y3Fe2Fe3O12 (YIG) within the temperature range 13.88 °C–32.50 °C. The results show that the thermal expansion coefficient of GGG in composite is larger than that of the GGG in single crystal; the thermal expansion coefficient of thick film YIG is also larger than that of thin film. The results also show that the thermal expansion coefficient of a composite consisting of film and its substrate can be measured by using a new method.

scholarly journals Thermal expansion and compressibility of single-crystal silicon between 285 K and 320 K

2020 ◽  
Vol 31 (6) ◽  
pp. 065013 ◽  
Author(s):  
Guido Bartl ◽  
Clemens Elster ◽  
Jörg Martin ◽  
René Schödel ◽  
Michael Voigt ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon
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