scholarly journals Thermal expansion coefficient of single-crystal silicon from 7 K to 293 K

2015 ◽  
Vol 92 (17) ◽  
Author(s):  
Thomas Middelmann ◽  
Alexander Walkov ◽  
Guido Bartl ◽  
René Schödel
1999 ◽  
Vol 14 (1) ◽  
pp. 2-4 ◽  
Author(s):  
Rui-sheng Liang ◽  
Feng-chao Liu

A new method is used in measuring the linear thermal expansion coefficients in composite consisting of a substrate Gd3Ga2Ga3O12 (GGG) and its epitaxial layer Y3Fe2Fe3O12 (YIG) within the temperature range 13.88 °C–32.50 °C. The results show that the thermal expansion coefficient of GGG in composite is larger than that of the GGG in single crystal; the thermal expansion coefficient of thick film YIG is also larger than that of thin film. The results also show that the thermal expansion coefficient of a composite consisting of film and its substrate can be measured by using a new method.


2016 ◽  
Vol 44 (4) ◽  
pp. 287-296 ◽  
Author(s):  
Dmitriy A. Chareev ◽  
Valentin O. Osadchii ◽  
Andrey A. Shiryaev ◽  
Alexey N. Nekrasov ◽  
Anatolii V. Koshelev ◽  
...  

2020 ◽  
Vol 31 (6) ◽  
pp. 065013 ◽  
Author(s):  
Guido Bartl ◽  
Clemens Elster ◽  
Jörg Martin ◽  
René Schödel ◽  
Michael Voigt ◽  
...  

1992 ◽  
Vol 31 (Part 1, No. 8) ◽  
pp. 2527-2529 ◽  
Author(s):  
Katsuji Haruna ◽  
Hiroshi Maeta ◽  
Kazutoshi Ohashi ◽  
Takuro Koike

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