Strained quantum-well leaky-mode diode laser arrays

1991 ◽  
Author(s):  
T. H. Shiau ◽  
Shang Z. Sun ◽  
Christian F. Schaus ◽  
Kang Zheng ◽  
G. Ronald Hadley ◽  
...  
Keyword(s):  
Quantum Well ◽  
Diode Laser ◽  
Leaky Mode ◽  
Laser Arrays ◽  
Strained Quantum Well

Dark-line-resistant diode laser at 0.8 mu m comprising InAlGaAs strained quantum well

1991 ◽  
Vol 3 (5) ◽  
pp. 409-411 ◽  
Author(s):  
R.G. Waters ◽  
R.J. Dalby ◽  
J.A. Baumann ◽  
J.L. De Sanctis ◽  
A.H. Shepard
Keyword(s):  
Quantum Well ◽  
Diode Laser ◽  
Dark Line ◽  
Strained Quantum Well

Stable‐mode operation of leaky‐mode diode laser arrays at high pulsed and cw currents

1991 ◽  
Vol 58 (5) ◽  
pp. 452-454 ◽  
Author(s):  
J. P. Hohimer ◽  
G. R. Hadley ◽  
D. C. Craft ◽  
T. H. Shiau ◽  
S. Sun ◽  
...  
Keyword(s):  
Diode Laser ◽  
Leaky Mode ◽  
Laser Arrays ◽  
Stable Mode ◽  
Mode Operation

Highly stable strained layer leaky-mode diode laser arrays

1990 ◽  
Vol 2 (8) ◽  
pp. 534-536 ◽  
Author(s):  
T.H. Shiau ◽  
S. Sun ◽  
C.F. Schaus ◽  
K. Zheng ◽  
G.R. Hadley
Keyword(s):  
Diode Laser ◽  
Leaky Mode ◽  
Laser Arrays ◽  
Strained Layer

Improvement of the Lifetime of a GaAs-Based Laser on Si with a Strained Quantum-Well Structure.

1994 ◽  
Vol 22 (12) ◽  
pp. 977-984
Author(s):  
Yoshiaki HASEGAWA ◽  
Takashi EGAWA ◽  
Takashi JIMBO ◽  
Masayoshi UMENO
Keyword(s):  
Quantum Well ◽  
Quantum Well Structure ◽  
Strained Quantum Well

NIR resonant-cavity-enhanced InP/InGaAs strained quantum well interband photodetector

1999 ◽  
Author(s):  
Serguei Jourba ◽  
Marie-Paule Besland ◽  
Michel Gendry ◽  
Michel Garrigues ◽  
Jean Louis Leclercq ◽  
...  
Keyword(s):  
Quantum Well ◽  
Resonant Cavity ◽  
Strained Quantum Well

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Band Structures ◽  
Quantum Well Laser ◽  
Suitable Combination ◽  
Gain Spectra ◽  
Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

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