Dark-line-resistant diode laser at 0.8 mu m comprising InAlGaAs strained quantum well

1991 ◽  
Vol 3 (5) ◽  
pp. 409-411 ◽  
Author(s):  
R.G. Waters ◽  
R.J. Dalby ◽  
J.A. Baumann ◽  
J.L. De Sanctis ◽  
A.H. Shepard
Keyword(s):  
Quantum Well ◽  
Diode Laser ◽  
Dark Line ◽  
Strained Quantum Well

Strained quantum-well leaky-mode diode laser arrays

1991 ◽  
Author(s):  
T. H. Shiau ◽  
Shang Z. Sun ◽  
Christian F. Schaus ◽  
Kang Zheng ◽  
G. Ronald Hadley ◽  
...  
Keyword(s):  
Quantum Well ◽  
Diode Laser ◽  
Leaky Mode ◽  
Laser Arrays ◽  
Strained Quantum Well

A Study of Degradation in High Power Multi-Mode InGaAs-AlGaAs Strained Quantum Well Lasers as Pump Lasers

2009 ◽  
Vol 1195 ◽  
Author(s):  
Yongkun Sin ◽  
Nathan Presser ◽  
Neil Ives ◽  
Steven C. Moss
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Deep Level ◽  
Quantum Well Lasers ◽  
Broad Area ◽  
Dark Line ◽  
Time Resolved ◽  
Transient Spectroscopy ◽  
Strained Quantum Well ◽  
Broad Area Lasers

AbstractDegradation processes in high power broad-area InGaAs-AlGaAs strained quantum well lasers were studied using electron beam-induced current (EBIC) techniques, time-resolved electroluminescence (TR-EL) techniques, and deep-level transient spectroscopy (DLTS). Accelerated lifetests of the broad-area lasers yielded catastrophic failures at the front facet and also in the bulk. EBIC was employed to study dark line defects generated in degraded lasers stressed under different test conditions. TR-EL was employed to study the intra-cavity intensity distribution in real time as devices were aged. DLTS was employed to study deep electron traps in both pristine and degraded laser diodes. Lastly, we present a possible scenario for the initiation of bulk degradation in the broad-area lasers.

Improvement of the Lifetime of a GaAs-Based Laser on Si with a Strained Quantum-Well Structure.

1994 ◽  
Vol 22 (12) ◽  
pp. 977-984
Author(s):  
Yoshiaki HASEGAWA ◽  
Takashi EGAWA ◽  
Takashi JIMBO ◽  
Masayoshi UMENO
Keyword(s):  
Quantum Well ◽  
Quantum Well Structure ◽  
Strained Quantum Well

NIR resonant-cavity-enhanced InP/InGaAs strained quantum well interband photodetector

1999 ◽  
Author(s):  
Serguei Jourba ◽  
Marie-Paule Besland ◽  
Michel Gendry ◽  
Michel Garrigues ◽  
Jean Louis Leclercq ◽  
...  
Keyword(s):  
Quantum Well ◽  
Resonant Cavity ◽  
Strained Quantum Well

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Band Structures ◽  
Quantum Well Laser ◽  
Suitable Combination ◽  
Gain Spectra ◽  
Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

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