Direct laser beam diagnostics

1991 ◽  
Author(s):  
Jan van Gilse ◽  
Stanley Koczera ◽  
Daniel F. Greby
Keyword(s):  
Laser Beam ◽  
Beam Diagnostics ◽  
Direct Laser

Binary diffractive elements for CO2 laser beam diagnostics

1996 ◽  
Author(s):  
Christian Hembd-Soellner ◽  
Christel Budzinski ◽  
Hans J. Tiziani
Keyword(s):  
Laser Beam ◽  
Beam Diagnostics

Analytical study of crossed atom-laser beam plasma diagnostics

1976 ◽  
Vol 15 (3) ◽  
pp. 381-388
Author(s):  
Kaare J. Nygaard
Keyword(s):  
Laser Beam ◽  
Analytical Study ◽  
Ion Beam ◽  
Hydrogen Plasma ◽  
Forward Direction ◽  
Beam Diagnostics ◽  
Plasma Region ◽  
Atom Beam ◽  
First Approximation ◽  
Electric And Magnetic Fields

A new method using crossed laser and atom beams within a plasma is capable of determining the electron density with a spatial resolution of 1 mm and a time resolution of 2–5 nsec. The measurement is done in the forward direction of the atom beam and is to a first approximation independent of electric and magnetic fields inside and outside the plasma region. A calculation is carried out for a neutral cesium beam probing a fully ionized hydrogen plasma. It is pointed out that a laser beam can also be combined with available ion beam diagnostics.

Wafer-Scale Laser Pantography: IV. Physics of Direct Laser-Writing Micron-Dimension Transistors

1983 ◽  
Vol 29 ◽  
Author(s):  
Irving P. Herman ◽  
Bruce M. Mcwilliams ◽  
Fred Mitlitsky ◽  
Hon Wah Chin ◽  
Roderick A. Hyde ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Laser Beam ◽  
Silicon Surface ◽  
Small Scale ◽  
Direct Laser Writing ◽  
Laser Writing ◽  
Surface Reduction ◽  
Tungsten Hexafluoride ◽  
Direct Laser ◽  
Experimental Findings

ABSTRACTThe processes involved in the fabrication of micron-dimension transistors and small-scale integrated circuits using only the technique of direct laser-writing by localized pyrolytic surface reactions are discussed. New experimental findings in the deposition of tungsten by silicon. surface reduction of tungsten hexafluoride and doped polysilicon are presented. The techniques used to fabricate laser beam-written n-MOSFET's are being extended to make unipolar JFET's and bipolar lateral pnp transistors.

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