Shielding by the ablation plume during Er:YAG laser ablation

Author(s):  
Kester Nahen ◽  
Alfred Vogel
1991 ◽  
Vol 52 (3) ◽  
pp. 217-224 ◽  
Author(s):  
J. T. Walsh ◽  
T. F. Deutsch

1994 ◽  
Vol 339 ◽  
Author(s):  
L. Rimai ◽  
R. Ager ◽  
W. H. Weber ◽  
J. Hangas ◽  
B. D. Poindexter

ABSTRACTSilicon carbide films are grown epitaxially on crystalline silicon substrates heated above 1000 °C, by laser ablation of pure carbon targets to thicknesses between 300 and 400 nm. These films grow on top of the silicon substrate from the carbon in the ablation plume and from the silicon of the substrate. By using a method of alternate ablation of a pure carbon and a pure silicon target, similar epitaxial films can be grown to thicknesses in excess of 1 μm with part of the silicon being supplied by the ablation plume of the silicon target.


2005 ◽  
Vol 97 (6) ◽  
pp. 064904 ◽  
Author(s):  
M. W. Stapleton ◽  
A. P. McKiernan ◽  
J.-P. Mosnier

2011 ◽  
Vol 75 (2) ◽  
pp. 126-132 ◽  
Author(s):  
Cristina Bueno BrandÃO ◽  
Marta Maria Martins Giamatei Contente ◽  
FabrÍCio Augusto De Lima ◽  
Rodrigo Galo ◽  
Alessandra Marques CorrÊA-Afonso ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document