(SiGe/Si) n /Si quantum wells for enhanced spontaneous emission LEDs

2001 ◽  
Author(s):  
Souren P. Pogossian ◽  
Adrian P. Vonsovici ◽  
Lili Vescan
Keyword(s):  
Quantum Wells ◽  
Spontaneous Emission

Influence of coupling of wells on spontaneous emission line shape in GaAs/GaAlAs multiple quantum wells

1988 ◽  
Vol 52 (10) ◽  
pp. 798-800 ◽  
Author(s):  
M. Krahl ◽  
J. Christen ◽  
D. Bimberg ◽  
G. Weimann ◽  
W. Schlapp
Keyword(s):  
Quantum Wells ◽  
Emission Line ◽  
Spontaneous Emission ◽  
Line Shape ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Influence of internal fields on gain and spontaneous emission in InGaN quantum wells

2006 ◽  
Vol 89 (17) ◽  
pp. 171120 ◽  
Author(s):  
J. Hader ◽  
J. V. Moloney ◽  
S. W. Koch
Keyword(s):  
Quantum Wells ◽  
Spontaneous Emission ◽  
Ingan Quantum Wells

Spontaneous Emission Rate and Radiative Current Density in p-GaAs/i-GaNAsBi/n-GaAs Quantum Well Lasers

2019 ◽  
Vol 16 (11) ◽  
pp. 4474-4478
Author(s):  
Ikram Hassouna Guizani ◽  
Ahmed Alhadi Rebey
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Spontaneous Emission ◽  
Current Density ◽  
Stark Effect ◽  
Emission Rate ◽  
Spontaneous Emission Rate ◽  
Doping Density ◽  
Quantum Well Structures ◽  
Quantum Confined Stark Effect

We have theoretically investigated the 1.55 μm emission of p–i–n GaNAsBi-based quantum wells (QWs) using a self-consistent calculation combined with (16×16) BAC model. Their performances are evaluated in terms of spontaneous emission rate Rsp and radiative current density Jrad. We have found that Jrad increases as function of the injected carrier density as well as the doping density. The quantum confined Stark effect on radiative current density in ideal lasers is also discussed. The radiative current density versus well width for simple and double p-GaAs/i-GaN·58yAs1-1·58yBiy/n-GaAs quantum well structures is also examined. We have obtained that Jrad increases with increase average thickness of GaNAsBi active region. The optimization of well parameters can be used as a basis for GaNAsBi-based lasers intended for optical fiber telecommunication wavelength.

Sign in / Sign up

Export Citation Format

Share Document