Wide Bandgap Light Emitting Materials and Devices

2007 ◽  
Keyword(s):  
Wide Bandgap ◽  
Light Emitting

Silicon-based light-emitting materials: implanted SiO2 films and wide-bandgap a-Si:H

2001 ◽  
Author(s):  
Ivan Pelant ◽  
Katerina Luterova ◽  
Petr Fojtik ◽  
Jean-Luc Rehspringer ◽  
Dominique Muller ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Light Emitting ◽  
Sio2 Films ◽  
Silicon Based

A new cross-linkable 9,10-diphenylanthracene derivative as a wide bandgap host for solution-processed organic light-emitting diodes

2018 ◽  
Vol 6 (47) ◽  
pp. 12948-12954 ◽  
Author(s):  
Rawad K. Hallani ◽  
Vahid Fallah Hamidabadi ◽  
Aron Joel Huckaba ◽  
Gianmarco Galliani ◽  
Azin Babaei ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Wide Bandgap ◽  
Organic Light Emitting Diodes ◽  
Solution Processed ◽  
Light Emitting ◽  
Organic Light

We present a cross-linkable wide bandgap host based on 9-(4-(10-phenylanthracene-9-yl)phenyl)-9H-carbazole.

Simulations of Heterostructures Based on 3C-4H and 6H-4H Silicon Carbide Polytypes

2018 ◽  
Vol 924 ◽  
pp. 302-305
Author(s):  
Muhammad Haroon Rashid ◽  
Ants Koel ◽  
Toomas Rang
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Frequency ◽  
High Performance ◽  
Light Emitting Diode ◽  
Wide Bandgap ◽  
Photovoltaic Device ◽  
Light Emitting ◽  
Current Voltage ◽  
Bandgap Semiconductors

In the last decade, silicon carbide (SiC) has gained a remarkable position among wide bandgap semiconductors due to its high temperature, high frequency, and high power electronics applications. SiC heterostructures, based on the most prominent polytypes like 3C-SiC, 4H-SiC and 6H-SiC, exhibit distinctive electrical and physical properties that make them promising candidates for high performance optoelectronic applications. The results of simulations of nn-junction 3C-4H/SiC and 6H-4H/SiC heterostructures, at the nanoscale and microscale, are presented in this paper. Nanoscale devices are simulated with QuantumWise Atomistix Toolkit (ATK) software, and microscale devices are simulated with Silvaco TCAD software. Current-voltage (IV) characteristics of nanoscale and microscale simulated devices are compared and discussed. The effects of non-ideal bonding at the heterojunction interface due to lattice misplacements (axial displacement of bonded wafers) are studied using the ATK simulator. These simulations lay the groundwork for the experiments, which are targeted to produce either a photovoltaic device or a light-emitting diode (working in the ultraviolet or terahertz spectra), by direct bonding of SiC polytypes.

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