X-ray characterization of PbSe/Si layers grown by pulsed laser ablation method

Author(s):  
Roman Rumianowski ◽  
Roman S. Dygdala ◽  
Waclaw Bala ◽  
Jaroslaw Sylwisty
1990 ◽  
Vol 201 ◽  
Author(s):  
Christopher Scarfone ◽  
M. Grant Norton ◽  
C. Barry Carter ◽  
Jian Li ◽  
James W. Mayer

AbstractThin films of barium titanate (BaTiOs) have been deposited by pulsed-laser ablation onto (001)-oriented MgO substrates. The films were epitactic as evidenced by both x-ray diffraction and ion-channeling techniques. The film surface appeared smooth and contained a low density of particulates. This latter feature is believed to be due to the formation of target pellets having a very high density.


2011 ◽  
Vol 214 ◽  
pp. 202-206 ◽  
Author(s):  
Wuttichai Phae-Ngam ◽  
Voravit Kosalathip ◽  
T. Kumpeerapun ◽  
Pichet Limsuwan ◽  
A. Dauscher

A long pulsed laser ablation with a moving target at high speed technique was applied to prepare tellurium nanoparticles from a tellurium target under argon gas at atmospheric pressure. The prepared nanoparticles were characterized by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDX), and X-ray diffraction (XRD). The influence of the moving speed of the target on the size, morphology and crystallographic structure of the nanoparticles was investigeated. The results show that for the target moving at high speed without burning of the target the production of isolated nanoparticles is obtained. The diameter of the nanoparticles is ranging from 30 to 200 nm.


2005 ◽  
Vol 351 (2) ◽  
pp. 116-123 ◽  
Author(s):  
Vladislav Dřínek ◽  
Karel Vacek ◽  
Josef Pola ◽  
Gleb Yuzhakov ◽  
Olga Šolcová ◽  
...  

2021 ◽  
Author(s):  
Husam Aldin A. Abdul Amir ◽  
Makram A Fakhri ◽  
Ali. A. Alwahib ◽  
Evan T. Salim

Abstract This study involves synthesizing gallium nitride (GaN) nanoparticles (NPs) under six different ablation energies using the pulsed laser ablation method. The nanoparticle was deposited using drop cast method on a quartz substrate. XRD pattern shows two peaks of h-GaN nanoparticles at 2θ = 34.64 and 37.98, reflected from (002) and (100) planes. The morphological properties indicate the hexagonal crystal nature of GaN that shows in the XRD pattern. Photoluminescence (PL) spectra show the highest laser power, 2000 mj has a minor emission peaked at 3.34 eV. The maximum emission peak 3.83 eV at 1400 mJ. The study depends on the pulsed laser to generate nanoparticles with different characteristics.


2014 ◽  
Vol 118 (1) ◽  
pp. 275-281 ◽  
Author(s):  
Pedro Sá ◽  
José Barbosa ◽  
Isabel T. Gomes ◽  
Jorge A. Mendes ◽  
João Ventura ◽  
...  

2000 ◽  
Vol 114 (5) ◽  
pp. 249-253 ◽  
Author(s):  
A.R James ◽  
A Pignolet ◽  
S Senz ◽  
N.D Zakharov ◽  
D Hesse

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