ABSTRACTTransport properties are reported for Bi nanowires, prepared by the filling of an alumina template with molten Bi. The temperature dependence of the resistance is presented for such arrays of Bi nanowires with diameters in the 40 to 200nm range. The data are understood qualitatively on the basis of a model for a quantum-confined system. Finally, a 4-point measurement is performed on an individual Bi nanowire prepared by using an electron beam lithography technique. Techniques for handling the practical issues of non-ohmic contacts and wire burn-out are given. The physical significance of the final results of the measurements are discussed in light of various scattering mechanisms in the nanowire.