Polycrystalline silicon thin film transistor technology for flexible large-area electronics

2001 ◽  
Author(s):  
YehJiun Tung ◽  
Paul G. Carey ◽  
Patrick M. Smith ◽  
Steven D. Theiss ◽  
Paul Wickboldt ◽  
...  
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Large Area ◽  
Silicon Thin Film ◽  
Large Area Electronics

Hybrid Amorphous and Polycrystalline Silicon Devices for Large-Area Electronics

1998 ◽  
Vol 508 ◽  
Author(s):  
P. Mei ◽  
J. B. Boyce ◽  
D. K. Fork ◽  
G. Anderson ◽  
J. Ho ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Large Area ◽  
Silicon Thin Film ◽  
Device Structure ◽  
Short Channel ◽  
Simple Modification ◽  
Large Area Electronics

AbstractDistinct features of amorphous and polycrystalline silicon are attractive for large-area electronics. These features can be utilized in a hybrid structure which consists of both amorphous and polycrystalline silicon materials. For example, an extension of active matrix technology is the integration of peripheral drivers for the improvement of reliability, cost reduction and compactness of the packaging for large-area electronics. This goal can be approached by a combination of amorphous silicon pixel switches and polysilicon drivers. A monolithic fabrication process has been developed based on a simple modification of the amorphous silicon transistor process which uses selective area laser crystallization. This approach allows us to share many of the process steps involved in making both the amorphous and polysilicon devices. Another example of the hybrid device structure is a self-aligned amorphous silicon thin film transistor with polysilicon source and drain contacts. The advantages of the self-aligned transistor are reduction of the parasitic capacitance and scaling down of the device dimension. With a selective laser doping technique, self-aligned and short-channel amorphous silicon thin film transistors have been demonstrated.

Hybrid Amorphous and Polycrystalline Silicon Devices For Large-Area Electronics

1998 ◽  
Vol 507 ◽  
Author(s):  
P. Mei ◽  
J. B. Boyce ◽  
D. K. Fork ◽  
G. Anderson ◽  
J. Ho ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Hybrid Structure ◽  
Large Area ◽  
Silicon Thin Film ◽  
Device Structure ◽  
Simple Modification ◽  
Large Area Electronics

ABSTRACTDistinct features of amorphous and polycrystalline silicon are attractive for large-area electronics. These features can be utilized in a hybrid structure which consists of both amorphous and polycrystalline silicon materials. For example, an extension of active matrix technology is the integration of peripheral drivers for the improvement of reliability, cost reduction and compactness of the packaging for large-area electronics. This goal can be approached by a combination of amorphous silicon pixel switches and polysilicon drivers. A monolithic fabrication process has been developed based on a simple modification of the amorphous silicon transistor process which uses selective area laser crystallization. This approach allows us to share many of the process steps involved in making both the amorphous and polysilicon devices. Another example of the hybrid device structure is a self-aligned amorphous silicon thin film transistor with polysilicon source and drain contacts. The advantages of the self-aligned transistor are reduction of the parasitic capacitance and scaling down of the device dimension. With a selective laser doping technique, self-aligned and shortchannel amorphous silicon thin film transistors have been demonstrated.

A Center-Offset Polycrystalline-Silicon Thin-Film Transistor With ${\rm n}^{+}$ Amorphous-Silicon Contacts

2009 ◽  
Vol 30 (1) ◽  
pp. 36-38 ◽  
Author(s):  
J. H. Oh ◽  
D. H. Kang ◽  
W. H. Park ◽  
J. Jang ◽  
Y. J. Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film

A Novel SiGe Raised Source/Drain Polycrystalline Silicon Thin-Film Transistor with Improved On-Current and Larger Breakdown Voltage

2003 ◽  
Vol 42 (Part 1, No. 3) ◽  
pp. 1164-1167 ◽  
Author(s):  
Du-Zen Peng ◽  
Ting-Chang Chang ◽  
Chin-Fu Liu ◽  
Ping-Hung Yeh ◽  
Po-Tsun Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Breakdown Voltage ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film

Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain

2002 ◽  
Vol 81 (25) ◽  
pp. 4763-4765 ◽  
Author(s):  
Du Zen Peng ◽  
Ting-Chang Chang ◽  
Po-Sheng Shih ◽  
Hsiao-Wen Zan ◽  
Tiao-Yuan Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film
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