Temperature dependencies of electrical resistivity and thermoelectric power of SnTe thin films

2001 ◽  
Author(s):  
Elena I. Rogacheva ◽  
Olga N. Nashchekina ◽  
Irina A. Korzh ◽  
Lidiya G. Voinova ◽  
Igor M. Krivulkin
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Thermoelectric Power

scholarly journals Electrical Resistivity, Thermoelectric Power and I-V Characteristics of Sb-Se Thin Films at Different Compositions.

2020 ◽  
Vol 9 (7) ◽  
pp. 894-896
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Resistivity ◽  
Thermoelectric Power ◽  
Room Temperature ◽  
Negative Temperature Coefficient ◽  
Selenium Concentration ◽  
Negative Temperature ◽  
Glass Substrates ◽  
Exponential Change

Sb-Se thin films of varying composition have been deposited on glass substrates at room temperature. These films were annealed at temperature interval of 50 0K. The electrical resistivity (ρ) and thermoelectric power (α) of same films were measured. The resistance of semiconducting films decreases rapidly on heating showing negative temperature coefficient of resistance (T.C.R.). The composition dependent resistivity shows exponential change, sharp fall of resistivity may be attributed due to increase of metallic ‘Sb’ in Sb-Se thin films. The composition dependent activation energy of Sb-Se thin films has been calculated. The activation energy (∆E) of semiconducting films was found to increase with selenium concentration. For different compositions thermoelectric power (α) increases upto 70 at. wt.% of Se concentration and then slowly decreases. The I-V characteristics of Sb-Se thin films were measured using copper (Cu) contacts. The films show ohmic conduction for different applied voltages as well as various concentrations of Selenium (Se) in Sb-Se thin films

Electrical Resistivity, Magnetic Susceptibility and Thermoelectric Power of PtGa2

1990 ◽  
Author(s):  
Li-Shing Hsu ◽  
Lu-Wei Zhou ◽  
F. L. Machado ◽  
W. G. Clark ◽  
R. S. Williams
Keyword(s):  
Electrical Resistivity ◽  
Magnetic Susceptibility ◽  
Thermoelectric Power

scholarly journals High thermoelectric power factor of pure and vanadium-alloyed chromium nitride thin films

2021 ◽  
pp. 102493
Author(s):  
M.A. Gharavi ◽  
D. Gambino ◽  
A. le Febvrier ◽  
F. Eriksson ◽  
R. Armiento ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Chromium Nitride ◽  
Thermoelectric Power Factor

scholarly journals Thickness dependent electrical resistivity modulation in tensile-strained epitaxial thin films of calcium manganese oxide

AIP Advances ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 045124
Author(s):  
Cacie Hart ◽  
Zoey Warecki ◽  
Grace Yong ◽  
David Houston ◽  
Rajeswari Kolagani
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Manganese Oxide ◽  
Epitaxial Thin Films

Epitaxial Growth of AlN Thin Films on Silicon and Sapphire by Pulsed Laser Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
R.D. Vispute ◽  
H. Wu ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Breakdown Field ◽  
Transmission Electron ◽  
Uv Visible ◽  
Relationship Of

ABSTRACTAIN thin films have been grown epitaxially on Si(111) and Al2O3(0001) substrates by pulsed laser deposition. These films were characterized by FTIR and UV-Visible, x-ray diffraction, high resolution transmission electron and scanning electron microscopy, and electrical resistivity. The films deposited on silicon and sapphire at 750-800°C and laser energy density of ∼ 2 to 3J/cm2 are epitaxial with an orientational relationship of AIN[0001]║ Si[111], AIN[2 110]║Si[011] and AlN[0001]║Al2O3[0001], AIN[1 2 1 0]║ Al2O3[0110] and AIN[1010] ║ Al2O3[2110]. The both AIN/Si and AIN/Al2O3 interfaces were found to be quite sharp without any indication of interfacial reactions. The absorption edge measured by UV-Visible spectroscopy for the epitaxial AIN film grown on sapphire was sharp and the band gap was found to be 6.1eV. The electrical resistivity of the films was about 5-6×l013Ω-cm with a breakdown field of 5×106V/cm. We also found that the films deposited at higher laser energy densities ≥10J/cm2 and lower temperatures ≤650°C were nitrogen deficient and containing free metallic aluminum which degrade the microstructural, electrical and optical properties of the AIN films

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