High-aspect-ratio structure formation in x-ray lithography

Author(s):  
Vladimir A. Kudryashov ◽  
Sing Lee
2019 ◽  
Vol 486 (6) ◽  
pp. 663-667
Author(s):  
N. M. Kuznetsov ◽  
A. V. Bakirov ◽  
S. I. Belousov ◽  
S. N. Chvalun

The electrorheological behavior is significantly affected by the strength of the structure formed in the electric field, due to the filler particles orientation. The structural organization of the filler in electric field was studied by X-ray scattering on paraffin films. Particles of layered aluminosilicates with a high aspect ratio and various morphology such as montmorillonite and halloysite were used as fillers. The differences in the structure formation by fillers of plate and tubular shape were shown.


2017 ◽  
Vol 170 ◽  
pp. 49-53 ◽  
Author(s):  
Jun Zhao ◽  
Yanqing Wu ◽  
Chaofan Xue ◽  
Shumin Yang ◽  
Liansheng Wang ◽  
...  

2001 ◽  
Vol 707 ◽  
Author(s):  
Harumasa Yoshida ◽  
Tatsuhiro Urushido ◽  
Hideto Miyake ◽  
Kazumasa Hiramtsu

ABSTRACTWe have successfully fabricated self-organized GaN nanotips by reactive ion etching using chlorine plasma, and have revealed the formation mechanism. Nanotips with a high density and a high aspect ratio have been formed after the etching. We deduce from X-ray photoelectron spectroscopy (XPS) analysis that the nanotip formation is attributed to nanometer-scale masks of SiO2 on GaN. The structures calculated by Monte Carlo simulation of our formation mechanism are very similar to the experimental nanotip structures.


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