Silicon surface micromachining of a deep vacuum cavity structure and its application to a microflow sensor

2000 ◽  
Author(s):  
Chi-Hoon Jun ◽  
Chang-Auck Choi ◽  
Won-Ick Jang ◽  
Youn Tae Kim
Keyword(s):  
Silicon Surface ◽  
Surface Micromachining ◽  
Cavity Structure ◽  
Microflow Sensor ◽  
Vacuum Cavity

Design, simulation and characterization of an inertia micro-switch fabricated by non-silicon surface micromachining

2007 ◽  
Vol 17 (8) ◽  
pp. 1598-1604 ◽  
Author(s):  
Zhuoqing Yang ◽  
Guifu Ding ◽  
Weiqiang Chen ◽  
Shi Fu ◽  
Xiaofeng Sun ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Surface Micromachining

A novel silicon surface micromachining angle sensor

1999 ◽  
Vol 73 (1-2) ◽  
pp. 68-73 ◽  
Author(s):  
Jörg R. Kaienburg ◽  
Ralf Schellin
Keyword(s):  
Silicon Surface ◽  
Surface Micromachining ◽  
Angle Sensor

A Micro Triggered Spark Gap Switch with Three Electrodes

2011 ◽  
Vol 694 ◽  
pp. 485-489
Author(s):  
Hui Shen ◽  
Gui Fu Ding ◽  
Zhen Wei Zhou ◽  
Zhuo Qing Yang ◽  
Xue Mei Cui
Keyword(s):  
Test Data ◽  
Rise Time ◽  
Silicon Surface ◽  
Pulse Current ◽  
Thin Strip ◽  
Surface Micromachining ◽  
Spark Gap ◽  
Mems Technology ◽  
Simulation Results ◽  
Spark Gap Switch

A planar micro triggered spark gap switch with three electrodes was designed and fabricated based on non-silicon surface micromachining technology. It consists of two main electrodes, the shape of which is semicircle, and a triggering electrode which is a thin strip. The gap distance between two main electrodes is 800μm. Benefitting from MEMS technology, the switch is integratable and its cost has the potential to be reduced. The designed switch has been optimized and tested. It gives out a pulse current with peak of 5165.21A and 129.6ns rise time. The test data has an agreement with the simulation results.

Silicon surface micromachining over active devices

1999 ◽  
Author(s):  
Ekalak Chaowicharat ◽  
Chee Y. Kwok ◽  
Graham A. Rigby
Keyword(s):  
Silicon Surface ◽  
Surface Micromachining ◽  
Active Devices

A MEMS Inertial Switch Based on Non-silicon Surface Micromachining Technology

2017 ◽  
pp. 1-51 ◽  
Author(s):  
Zhuoqing Yang ◽  
Guifu Ding ◽  
Yan Wang ◽  
Xiaolin Zhao
Keyword(s):  
Silicon Surface ◽  
Surface Micromachining ◽  
Inertial Switch

Silicon surface micromachining by anhydrous HF gas-phase etching with methanol

1998 ◽  
Author(s):  
Won-Ick Jang ◽  
Chang-Auck Choi ◽  
Chang S. Lee ◽  
Yoonshik Hong ◽  
Jong-Hyun Lee ◽  
...  
Keyword(s):  
Gas Phase ◽  
Silicon Surface ◽  
Surface Micromachining

UHV-STM studies of silicon nano-pyramid growth on silicon surface at high temperature

1992 ◽  
Vol 50 (2) ◽  
pp. 1144-1145
Author(s):  
T. Sato ◽  
S. Kitamura ◽  
T. Sueyoshl ◽  
M. Iwatukl ◽  
C. Nielsen
Keyword(s):  
High Temperature ◽  
Relaxation Process ◽  
Thermal Effect ◽  
Bias Voltage ◽  
Silicon Surface ◽  
Growth Process ◽  
Tunneling Current ◽  
Fabrication Technique ◽  
Nano Fabrication ◽  
Electromigration Effect

Recently, the growth process and relaxation process of crystalline structures were studied by observing a SI nano-pyramid which was built on a Si surface with a UHV-STM. A UHV-STM (JEOL JSTM-4000×V) was used for studying a heated specimen, and the specimen was kept at high temperature during observation. In this study, the nano-fabrication technique utilizing the electromigration effect between the STM tip and the specimen was applied. We observed Si atoms migrated towords the tip on a high temperature Si surface.Clean surfaces of Si(lll)7×7 and Si(001)2×l were prepared In the UHV-STM at a temperature of approximately 600 °C. A Si nano-pyramid was built on the Si surface at a tunneling current of l0nA and a specimen bias voltage of approximately 0V in both polarities. During the formation of the pyramid, Images could not be observed because the tip was stopped on the sample. After the formation was completed, the pyramid Image was observed with the same tip. After Imaging was started again, the relaxation process of the pyramid started due to thermal effect.

Profile Imaging of Silicon Surface Reconstructions

1985 ◽  
Vol 43 ◽  
pp. 262-263
Author(s):  
O.L. Krivanek ◽  
G.J. Wood
Keyword(s):  
Electron Microscopy ◽  
Surface Structure ◽  
Structure Determination ◽  
Silicon Surface ◽  
Good Resolution ◽  
Surface Reconstructions ◽  
Bulk Structure ◽  
Point To Point ◽  
The Relationship

Electron microscopy at 0.2nm point-to-point resolution, 10-10 torr specimei region vacuum and facilities for in-situ specimen cleaning presents intere; ing possibilities for surface structure determination. Three methods for examining the surfaces are available: reflection (REM), transmission (TEM) and profile imaging. Profile imaging is particularly useful because it giv good resolution perpendicular as well as parallel to the surface, and can therefore be used to determine the relationship between the surface and the bulk structure.

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