Silicon surface micromachining over active devices

1999 ◽  
Author(s):  
Ekalak Chaowicharat ◽  
Chee Y. Kwok ◽  
Graham A. Rigby
Keyword(s):  
Silicon Surface ◽  
Surface Micromachining ◽  
Active Devices

Design, simulation and characterization of an inertia micro-switch fabricated by non-silicon surface micromachining

2007 ◽  
Vol 17 (8) ◽  
pp. 1598-1604 ◽  
Author(s):  
Zhuoqing Yang ◽  
Guifu Ding ◽  
Weiqiang Chen ◽  
Shi Fu ◽  
Xiaofeng Sun ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Surface Micromachining

A Monolithic MEMS Accelerometer Process

2011 ◽  
Vol 483 ◽  
pp. 70-74
Author(s):  
Xiao Gang Li ◽  
Yong Mei ◽  
Wen Gang Huang ◽  
Zheng Yuan Zhang ◽  
Jian Gen Li ◽  
...  
Keyword(s):  
Surface Micromachining ◽  
Sensing Element ◽  
Mems Accelerometer ◽  
Comb Finger ◽  
Active Devices ◽  
Passive Devices ◽  
Bicmos Technology ◽  
Signal Conditioning Circuit ◽  
Conditioning Circuit ◽  
External Acceleration

A monolithic MEMS accelerometer process was established. This process successfully combines our standard BiCMOS technology and MEMS surface micromachining technique. The acceleration sensing element is a kind of comb-finger structure which is built by polysilicon surface micromachining technique. The polysilicon structure is designed to form two capacitors for acceleration sensing. The external acceleration will cause the value of two capacitors to vary in different direction. That means one reduces if the other increases. It was integrated with the signal conditioning circuit. In a single die, the active devices including vertical NPN, lateral PNP, PMOS and passive devices such as capacitors, resistors were fabricated which was followed by the steps to form the acceleration sensing structure. The experiment indicates that the fabricated circuit has the function of sensing capacitive variation and with a scale factor of 100mV/g.

A novel silicon surface micromachining angle sensor

1999 ◽  
Vol 73 (1-2) ◽  
pp. 68-73 ◽  
Author(s):  
Jörg R. Kaienburg ◽  
Ralf Schellin
Keyword(s):  
Silicon Surface ◽  
Surface Micromachining ◽  
Angle Sensor

A Micro Triggered Spark Gap Switch with Three Electrodes

2011 ◽  
Vol 694 ◽  
pp. 485-489
Author(s):  
Hui Shen ◽  
Gui Fu Ding ◽  
Zhen Wei Zhou ◽  
Zhuo Qing Yang ◽  
Xue Mei Cui
Keyword(s):  
Test Data ◽  
Rise Time ◽  
Silicon Surface ◽  
Pulse Current ◽  
Thin Strip ◽  
Surface Micromachining ◽  
Spark Gap ◽  
Mems Technology ◽  
Simulation Results ◽  
Spark Gap Switch

A planar micro triggered spark gap switch with three electrodes was designed and fabricated based on non-silicon surface micromachining technology. It consists of two main electrodes, the shape of which is semicircle, and a triggering electrode which is a thin strip. The gap distance between two main electrodes is 800μm. Benefitting from MEMS technology, the switch is integratable and its cost has the potential to be reduced. The designed switch has been optimized and tested. It gives out a pulse current with peak of 5165.21A and 129.6ns rise time. The test data has an agreement with the simulation results.

A MEMS Inertial Switch Based on Non-silicon Surface Micromachining Technology

2017 ◽  
pp. 1-51 ◽  
Author(s):  
Zhuoqing Yang ◽  
Guifu Ding ◽  
Yan Wang ◽  
Xiaolin Zhao
Keyword(s):  
Silicon Surface ◽  
Surface Micromachining ◽  
Inertial Switch

Silicon surface micromachining by anhydrous HF gas-phase etching with methanol

1998 ◽  
Author(s):  
Won-Ick Jang ◽  
Chang-Auck Choi ◽  
Chang S. Lee ◽  
Yoonshik Hong ◽  
Jong-Hyun Lee ◽  
...  
Keyword(s):  
Gas Phase ◽  
Silicon Surface ◽  
Surface Micromachining

UHV-STM studies of silicon nano-pyramid growth on silicon surface at high temperature

1992 ◽  
Vol 50 (2) ◽  
pp. 1144-1145
Author(s):  
T. Sato ◽  
S. Kitamura ◽  
T. Sueyoshl ◽  
M. Iwatukl ◽  
C. Nielsen
Keyword(s):  
High Temperature ◽  
Relaxation Process ◽  
Thermal Effect ◽  
Bias Voltage ◽  
Silicon Surface ◽  
Growth Process ◽  
Tunneling Current ◽  
Fabrication Technique ◽  
Nano Fabrication ◽  
Electromigration Effect

Recently, the growth process and relaxation process of crystalline structures were studied by observing a SI nano-pyramid which was built on a Si surface with a UHV-STM. A UHV-STM (JEOL JSTM-4000×V) was used for studying a heated specimen, and the specimen was kept at high temperature during observation. In this study, the nano-fabrication technique utilizing the electromigration effect between the STM tip and the specimen was applied. We observed Si atoms migrated towords the tip on a high temperature Si surface.Clean surfaces of Si(lll)7×7 and Si(001)2×l were prepared In the UHV-STM at a temperature of approximately 600 °C. A Si nano-pyramid was built on the Si surface at a tunneling current of l0nA and a specimen bias voltage of approximately 0V in both polarities. During the formation of the pyramid, Images could not be observed because the tip was stopped on the sample. After the formation was completed, the pyramid Image was observed with the same tip. After Imaging was started again, the relaxation process of the pyramid started due to thermal effect.

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