Experimental one- and two-dimensional mechanical stress characterization of silicon microsystems using micro-Raman spectroscopy

2000 ◽  
Author(s):  
W. Merlijn van Spengen ◽  
Ingrid De Wolf ◽  
Roy Knechtel
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Two Dimensional ◽  
Micro Raman Spectroscopy

Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation with Defect Generation and Diode Leakage

1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Defect Formation ◽  
Active Area ◽  
Wet Oxidation ◽  
Leakage Currents ◽  
Shallow Trench Isolation ◽  
Micro Raman Spectroscopy ◽  
Silicon Devices ◽  
Trench Isolation

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.

XRD, SEM/EDX and micro-Raman spectroscopy for mineralogical and chemical characterization of iron slags from the Roman archaeological site of Forua (Biscay, North Spain)

2018 ◽  
Vol 138 ◽  
pp. 246-254 ◽  
Author(s):  
Haizea Portillo ◽  
Maria Cruz Zuluaga ◽  
Luis Angel Ortega ◽  
Ainhoa Alonso-Olazabal ◽  
Xabier Murelaga ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Characterization ◽  
Archaeological Site ◽  
Micro Raman Spectroscopy

Raman spectroscopy characterization of two-dimensional materials

2018 ◽  
Vol 27 (3) ◽  
pp. 037802 ◽  
Author(s):  
Fang Liang ◽  
Hejun Xu ◽  
Xing Wu ◽  
Chaolun Wang ◽  
Chen Luo ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Two Dimensional ◽  
Two Dimensional Materials

scholarly journals Micro-Raman Spectroscopy, a Powerful Technique Allowing Sure Identification and Complete Characterization of Asbestiform Minerals

2019 ◽  
Vol 9 (15) ◽  
pp. 3092 ◽  
Author(s):  
Caterina Rinaudo ◽  
Alessandro Croce
Keyword(s):  
Raman Spectroscopy ◽  
Crystal Surface ◽  
Complete Characterization ◽  
Mineral Phase ◽  
Asbestos Fibers ◽  
Micro Raman Spectroscopy ◽  
Fibrous Minerals ◽  
Iron Sulphate ◽  
Asbestiform Minerals

Micro-Raman spectroscopy has been applied to fibrous minerals regulated as “asbestos”—anthophyllite, actinolite, amosite, crocidolite, tremolite, and chrysotile—responsible of severe diseases affecting mainly, but not only, the respiratory system. The technique proved to be powerful in the identification of the mineral phase and in the recognition of particles of carbonaceous materials (CMs) lying on the “asbestos” fibers surface. Also, erionite, a zeolite mineral, from different outcrops has been analyzed. To erionite has been ascribed the peak of mesothelioma noticed in Cappadocia (Turkey) during the 1970s. On the fibers, micro-Raman spectroscopy allowed to recognize many grains, micrometric in size, of iron oxy-hydroxides or potassium iron sulphate, in erionite from Oregon, or particles of CMs, in erionite from North Dakota, lying on the crystal surface. Raman spectroscopy appears therefore to be the technique allowing, without preparation of the sample, a complete characterization of the minerals and of the associated phases.

Variation of Local Mechanical Stress During the Different Processing Steps of Ic-Isolation: a Micro-Raman Spectroscopy Study

1993 ◽  
Vol 308 ◽  
Author(s):  
Ingrid De Wolf ◽  
Herman E. Maes ◽  
Hans Norström
Keyword(s):  
Raman Spectroscopy ◽  
Integrated Circuits ◽  
Mechanical Stress ◽  
Local Variation ◽  
Micro Raman Spectroscopy ◽  
Induced Stress ◽  
Last Stage ◽  
Edge Force ◽  
Field Oxide ◽  
Processing Steps

ABSTRACTLocal mechanical stress introduced in the silicon substrate during the successive steps of poly-buffered local isolation of MOS integrated circuits is studied with micro-Raman spectroscopy. It is shown that the magnitude and the local variation of the stress is highly affected by the different processing steps. After deposition of the nitride mask, the stress can be described as caused by an edge-force. Field oxidation reduces the mask-induced stress but introduces thermal stress from the field oxide. Also the formation of the bird's beak gives rise to additional local tensile stress, especially at the tip of the bird's beak. Removal of the nitride mask results in a partial relaxation: the stress caused by the bird's beak relaxes. In this last stage of the isolation process, the stress image is mostly determined by the field oxide.

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