Effect of rapid thermal annealing on radio-frequency magnetron-sputtered GaN thin films and Au/GaN Schottky diodes

1999 ◽  
Vol 17 (4) ◽  
pp. 1545 ◽  
Author(s):  
Ching-Wu Wang ◽  
Jin-Yuan Liao ◽  
Chih-Liang Chen ◽  
Wen-Kuan Lin ◽  
Yan-Kuin Su ◽  
...  
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Diodes ◽  
Radio Frequency Magnetron

scholarly journals Influence of Annealing Temperature on the Characteristics of Ti-Codoped GZO Thin Solid Film

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Tao-Hsing Chen ◽  
Tzu-Yu Liao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering

This study utilizes radio frequency magnetron sputtering (RF sputtering) to deposit GZO transparent conductive film and Ti thin film on the same corning glass substrate and then treats GZO/Ti thin film with rapid thermal annealing. The annealing temperatures are 300°C , 500°C, and 550°C, respectively. Ti:GZO transparent conductive oxide (TCO) thin films are deposited on glass substrates using a radio frequency magnetron sputtering technique. The thin films are then annealed at temperatures of 300°C, 500°C, and 550°C, respectively, for rapid thermal annealing. The effects of the annealing temperature on the optical properties, resistivity, and nanomechanical properties of the Ti:GZO thin films are then systematically explored. The results show that all of the annealed films have excellent transparency (~90%) in the visible light range. Moreover, the resistivity of the Ti:GZO films reduces with an increasing annealing temperature, while the carrier concentration and Hall mobility both increase. Finally, the hardness and Young’s modulus of the Ti:GZO thin films are both found to increase as the annealing temperature is increased.

Effect of rapid thermal annealing on Zn1-xCdxO layers grown by radio-frequency magnetron co-sputtering

2010 ◽  
Vol 45 (10) ◽  
pp. 1050-1056 ◽  
Author(s):  
J. H. Yu ◽  
J. H. Kim ◽  
D. S. Park ◽  
T. S. Jeong ◽  
C. J. Youn ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Radio Frequency Magnetron

Effect of deposition pressure on the structural and optical properties of Ga2O3films obtained by thermal post-crystallization

CrystEngComm ◽  
2018 ◽  
Vol 20 (1) ◽  
pp. 133-139 ◽  
Author(s):  
Yikai Liao ◽  
Shujie Jiao ◽  
Shaofang Li ◽  
Jinzhong Wang ◽  
Dongbo Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Thermal Annealing ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Structural And Optical Properties ◽  
Deposition Pressure ◽  
Amorphous Thin Films

β-Ga2O3films have been obtained by thermal annealing of amorphous thin films that were deposited by radio frequency magnetron sputtering.

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