Photoelectric characteristics of the epitaxial film CdxHg1-xTe grown by molecular beam epitaxy

1999 ◽  
Author(s):  
Aleksander V. Voitsekhovskii ◽  
Yu. A. Denisov ◽  
Andrej P. Kokhanenko
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Film ◽  
Photoelectric Characteristics

Growth and phase transition characteristics of pure M-phase VO2 epitaxial film prepared by oxide molecular beam epitaxy

2013 ◽  
Vol 103 (13) ◽  
pp. 131914 ◽  
Author(s):  
L. L. Fan ◽  
S. Chen ◽  
Y. F. Wu ◽  
F. H. Chen ◽  
W. S. Chu ◽  
...  
Keyword(s):  
Phase Transition ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Film ◽  
M Phase

Effect of Growth Mode on Eu-Incorporation and Luminescence of Eu-Doped GaN Epitaxial Film Grown by Plasma-Assisted Molecular Beam Epitaxy

2011 ◽  
Vol 50 ◽  
pp. 031003 ◽  
Author(s):  
Ji-Ho Park ◽  
Akihiro Wakahara ◽  
Hiroshi Okada ◽  
Hiroto Sekiguchi ◽  
Ajay Tiwari ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Film ◽  
Growth Mode

Growth process of β-FeSi 2 epitaxial film on Si(1 1 1) by molecular beam epitaxy

2006 ◽  
Vol 253 (2) ◽  
pp. 444-448 ◽  
Author(s):  
S.Y. Ji ◽  
J.F. Wang ◽  
J.-W. Lim ◽  
M. Isshiki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Process ◽  
Molecular Beam ◽  
Epitaxial Film

Effect of Growth Mode on Eu-Incorporation and Luminescence of Eu-Doped GaN Epitaxial Film Grown by Plasma-Assisted Molecular Beam Epitaxy

2011 ◽  
Vol 50 (3R) ◽  
pp. 031003 ◽  
Author(s):  
Ji-Ho Park ◽  
Akihiro Wakahara ◽  
Hiroshi Okada ◽  
Hiroto Sekiguchi ◽  
Ajay Tiwari ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Film ◽  
Growth Mode

High quality β-FeSi2 epitaxial film grown on hydrogen terminated Si (111) by molecular beam epitaxy

2005 ◽  
Vol 59 (18) ◽  
pp. 2370-2373 ◽  
Author(s):  
S.Y. Ji ◽  
G.M. Lalev ◽  
J.F. Wang ◽  
M. Uchikoshi ◽  
M. Isshiki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Film ◽  
High Quality

scholarly journals Topological Transition in a 3 nm Thick Al Film Grown by Molecular Beam Epitaxy

2019 ◽  
Vol 2019 ◽  
pp. 1-6
Author(s):  
Ankit Kumar ◽  
Guan-Ming Su ◽  
Chau-Shing Chang ◽  
Ching-Chen Yeh ◽  
Bi-Yi Wu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Epitaxial Film ◽  
Two Dimensions ◽  
Quantum Devices ◽  
Topological Transition ◽  
Ideal System ◽  
Bkt Transition ◽  
Physical Phenomena

We have performed detailed transport measurements on a 3 nm thick (as-grown) Al film on GaAs prepared by molecular beam epitaxy (MBE). Such an epitaxial film grown on a GaAs substrate shows the Berezinskii-Kosterlitz-Thouless (BKT) transition, a topological transition in two dimensions. Our experimental data shows that the MBE-grown Al nanofilm is an ideal system for probing interesting physical phenomena such as the BKT transition and superconductivity. The increased superconductor transition temperature (~2.4 K) compared to that of bulk Al (1.2 K), together with the ultrathin film quality, may be advantageous for future superconductor-based quantum devices and quantum information technology.

The controllable growth of Co–BaTiO3 nanocomposite epitaxial film by laser molecular beam epitaxy

2010 ◽  
Vol 312 (16-17) ◽  
pp. 2489-2493 ◽  
Author(s):  
Fangfang Ge ◽  
Li Bai ◽  
Weidong Wu ◽  
Linhong Cao ◽  
Xuemin Wang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Film ◽  
Laser Molecular Beam Epitaxy ◽  
Controllable Growth
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