Growth and phase transition characteristics of pure M-phase VO2 epitaxial film prepared by oxide molecular beam epitaxy

2013 ◽  
Vol 103 (13) ◽  
pp. 131914 ◽  
Author(s):  
L. L. Fan ◽  
S. Chen ◽  
Y. F. Wu ◽  
F. H. Chen ◽  
W. S. Chu ◽  
...  
Keyword(s):  
Phase Transition ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Film ◽  
M Phase

Interface mediated semiconducting to metallic like transition in ultrathin Bi2Se3 films on (100) SrTiO3 grown by molecular beam epitaxy

RSC Advances ◽  
2015 ◽  
Vol 5 (107) ◽  
pp. 87897-87902
Author(s):  
Anil K. Debnath ◽  
R. Prasad ◽  
Ajay Singh ◽  
Soumen Samanta ◽  
Ashwini Kumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Molecular Beam Epitaxy ◽  
Structural Phase Transition ◽  
Molecular Beam ◽  
Structural Phase

Compressive strains due to the structural phase transition of SrTiO3 substrate facilitate semiconductor to metal like transition in Bi2Se3 thin films.

Effect of Growth Mode on Eu-Incorporation and Luminescence of Eu-Doped GaN Epitaxial Film Grown by Plasma-Assisted Molecular Beam Epitaxy

2011 ◽  
Vol 50 ◽  
pp. 031003 ◽  
Author(s):  
Ji-Ho Park ◽  
Akihiro Wakahara ◽  
Hiroshi Okada ◽  
Hiroto Sekiguchi ◽  
Ajay Tiwari ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Film ◽  
Growth Mode

Growth process of β-FeSi 2 epitaxial film on Si(1 1 1) by molecular beam epitaxy

2006 ◽  
Vol 253 (2) ◽  
pp. 444-448 ◽  
Author(s):  
S.Y. Ji ◽  
J.F. Wang ◽  
J.-W. Lim ◽  
M. Isshiki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Process ◽  
Molecular Beam ◽  
Epitaxial Film

Effect of Growth Mode on Eu-Incorporation and Luminescence of Eu-Doped GaN Epitaxial Film Grown by Plasma-Assisted Molecular Beam Epitaxy

2011 ◽  
Vol 50 (3R) ◽  
pp. 031003 ◽  
Author(s):  
Ji-Ho Park ◽  
Akihiro Wakahara ◽  
Hiroshi Okada ◽  
Hiroto Sekiguchi ◽  
Ajay Tiwari ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Film ◽  
Growth Mode

High quality β-FeSi2 epitaxial film grown on hydrogen terminated Si (111) by molecular beam epitaxy

2005 ◽  
Vol 59 (18) ◽  
pp. 2370-2373 ◽  
Author(s):  
S.Y. Ji ◽  
G.M. Lalev ◽  
J.F. Wang ◽  
M. Uchikoshi ◽  
M. Isshiki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Film ◽  
High Quality

scholarly journals Особенности МДП-структур на основе изолирующих пленок PbSnTe : In с составом вблизи инверсии зон, обусловленные их сегнетоэлектрическими свойствами

2020 ◽  
Vol 54 (10) ◽  
pp. 1122
Author(s):  
А.Э. Климов ◽  
А.Н. Акимов ◽  
И.О. Ахундов ◽  
В.А. Голяшов ◽  
Д.В. Горшков ◽  
...  
Keyword(s):  
Phase Transition ◽  
Molecular Beam Epitaxy ◽  
Curie Temperature ◽  
Ferroelectric Phase Transition ◽  
Molecular Beam ◽  
Ferroelectric Phase ◽  
Band Inversion ◽  
Mis Structures

The characteristics of MIS structures based on insulating PbSnTe:In films with compositions in the vicinity of a band inversion grown by molecular beam epitaxy (MBE) were studied. It has been shown that a number of their features can be caused by a ferroelectric phase transition with a Curie temperature in the range T ≈ 15–20 K.

Role of the phase transition at GaN QDs formation on (0001)AlN surface by ammonia molecular beam epitaxy

2018 ◽  
Vol 133 (2) ◽  
pp. 1181-1187
Author(s):  
Kseniya A. Konfederatova ◽  
Vladimir G. Mansurov ◽  
Timur V. Malin ◽  
Yurij G. Galitsyn ◽  
Ivan A. Aleksandrov ◽  
...  
Keyword(s):  
Phase Transition ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam
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