Charge collection in multielectrode CdZnTe detectors

1999 ◽  
Author(s):  
Thomas H. Prettyman ◽  
Morag K. Smith ◽  
Paul N. Luke ◽  
Mark S. Amman ◽  
Julie S. Lee
Keyword(s):  
Charge Collection ◽  
Cdznte Detectors

Identification of single-pixel incomplete charge collection events by using cathode waveform in pixelated CdZnTe detectors

2020 ◽  
Vol 15 (09) ◽  
pp. P09017-P09017
Author(s):  
J. Yang ◽  
Y.L. Li ◽  
Y. Tian ◽  
L. Xu ◽  
Y.M. Cai ◽  
...  
Keyword(s):  
Charge Collection ◽  
Cdznte Detectors ◽  
Single Pixel

A Study Of The Composition Uniformity, Electrical And Spectroscopic Properties Of CdZnTe Detectors

1997 ◽  
Vol 487 ◽  
Author(s):  
M-A. Gagliardi ◽  
S. Nenonen ◽  
T. Gagliardi ◽  
K. T. Hjelt ◽  
M. Juvonen ◽  
...  
Keyword(s):  
Spectroscopic Properties ◽  
Test Methods ◽  
Charge Collection ◽  
Test Results ◽  
Cdznte Detector ◽  
Final Performance ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Cdznte Detectors ◽  
Selection Of

AbstractThe electrical and charge collection properties of a semiconductor detector play an important role in a spectrometer's final performance. However, the studies of these properties often concentrate on only a few samples. In this work over 100 CdZnTe detectors from 12 different growth boules were characterized with one of the following test methods. The composition uniformity was evaluated with low temperature photoluminescence (PL) measurements. From the current-voltage characteristics the differences in CdZnTe detector resistivities were investigated. Charge collection properties, μτ-products, and energy resolutions were characterized with spectroscopic methods using an alpha and isotopic sources. A wide selection of test results are presented indicating the variety of CdZnTe material.

Evaluation of Indium Diffused M-i-n CdZnTe Detectors

1997 ◽  
Vol 487 ◽  
Author(s):  
M-A. Gagliardi ◽  
S. Nenonen ◽  
T. Gagliardi ◽  
L. Aleksejeva ◽  
V. Ivanov ◽  
...  
Keyword(s):  
Leakage Current ◽  
Spectroscopic Properties ◽  
Charge Collection ◽  
Noise Sources ◽  
Junction Formation ◽  
Detector Structure ◽  
Junction Type ◽  
Cdznte Detectors ◽  
Type Detector ◽  
Indium Diffusion

AbstractOne of the main electronic noise sources of a room temperature spectroscopy system is the leakage current of a detector. It can be reduced with a pn-junction type detector structure such as a M-i-n configuration, and with cooling. In this work eight CdZnTe detectors with a M-i-n structure were fabricated by indium diffusion. The junction was characterized by a currentvoltage technique. Detector electrical, charge collection and spectroscopic properties were compared to the ones received with the traditional electroless Au contacts, before the junction formation. As a result of the indium diffusion an improved detector leakage current performance was achieved. However, a corresponding improvement in the detector energy resolution was not always observed due to the CdZnTe charge collection properties and process variables.

Wavelength dependence on the space charge collection in CdZnTe detectors

2012 ◽  
Vol 111 (11) ◽  
pp. 113715 ◽  
Author(s):  
Aaron L. Washington ◽  
Lucile C. Teague ◽  
Martine C. Duff ◽  
Arnold Burger ◽  
Michael Groza ◽  
...  
Keyword(s):  
Space Charge ◽  
Wavelength Dependence ◽  
Charge Collection ◽  
Cdznte Detectors

scholarly journals Charge Sharing and Charge Loss in High-Flux Capable Pixelated CdZnTe Detectors

Sensors ◽  
2021 ◽  
Vol 21 (9) ◽  
pp. 3260
Author(s):  
Kjell A. L. Koch-Mehrin ◽  
Sarah L. Bugby ◽  
John E. Lees ◽  
Matthew C. Veale ◽  
Matthew D. Wilson
Keyword(s):  
Carrier Transport ◽  
Hole Transport ◽  
Uniform Electric Field ◽  
Photon Flux ◽  
High Flux ◽  
Charge Sharing ◽  
Cdte Detector ◽  
Charge Loss ◽  
Cdznte Detectors ◽  
Detector Model

Cadmium zinc telluride (CdZnTe) detectors are known to suffer from polarization effects under high photon flux due to poor hole transport in the crystal material. This has led to the development of a high-flux capable CdZnTe material (HF-CdZnTe). Detectors with the HF-CdZnTe material have shown promising results at mitigating the onset of the polarization phenomenon, likely linked to improved crystal quality and hole carrier transport. Better hole transport will have an impact on charge collection, particularly in pixelated detector designs and thick sensors (>1 mm). In this paper, the presence of charge sharing and the magnitude of charge loss were calculated for a 2 mm thick pixelated HF-CdZnTe detector with 250 μm pixel pitch and 25 μm pixel gaps, bonded to the STFC HEXITEC ASIC. Results are compared with a CdTe detector as a reference point and supported with simulations from a Monte-Carlo detector model. Charge sharing events showed minimal charge loss in the HF-CdZnTe, resulting in a spectral resolution of 1.63 ± 0.08 keV Full Width at Half Maximum (FWHM) for bipixel charge sharing events at 59.5 keV. Depth of interaction effects were shown to influence charge loss in shared events. The performance is discussed in relation to the improved hole transport of HF-CdZnTe and comparison with simulated results provided evidence of a uniform electric field.

A study of the charge collection properties of polycrystalline CVD diamond with synchrotron radiation

2011 ◽  
Vol 20 (3) ◽  
pp. 398-402 ◽  
Author(s):  
Alexander Oh ◽  
Thorsten Wengler ◽  
Mahfuza Ahmed ◽  
Cinzia Da Via ◽  
Stephen Watts
Keyword(s):  
Synchrotron Radiation ◽  
Cvd Diamond ◽  
Charge Collection
Sign in / Sign up

Export Citation Format

Share Document