Single-carrier charge collection in thin direct-conversion semiconductor neutron detector: A numerical simulation

2021 ◽  
Vol 129 (19) ◽  
pp. 194502
Author(s):  
Gyanendra Bhattarai ◽  
Anthony N. Caruso ◽  
Michelle M. Paquette
Keyword(s):  
Numerical Simulation ◽  
Neutron Detector ◽  
Direct Conversion ◽  
Charge Collection ◽  
Single Carrier ◽  
Carrier Charge

scholarly journals Single carrier charge collection in semiconductor nuclear detectors

1977 ◽  
Vol 12 (2) ◽  
pp. 303-310 ◽  
Author(s):  
H.L. Malm ◽  
D. Litchinsky ◽  
C. Canali
Keyword(s):  
Charge Collection ◽  
Single Carrier ◽  
Carrier Charge ◽  
Nuclear Detectors

The All Boron Carbide Diode Neutron Detector: Experiment and Modeling Approach

2006 ◽  
Vol 981 ◽  
Author(s):  
Ildar Sabirianov ◽  
Robert W Fairchild ◽  
Jennifer I Brand
Keyword(s):  
Boron Carbide ◽  
Neutron Capture ◽  
Neutron Detector ◽  
Reasonable Agreement ◽  
Charge Collection ◽  
Thermal Neutrons ◽  
Metal Contacts ◽  
Solid State Detector ◽  
Detector Experiment ◽  
State Detector

AbstractBoron carbide diode detectors, fabricated from two different polytypes of semiconducting boron carbide, will detect neutrons in reasonable agreement with theoretical expectations. The performance of the all boron carbide neutron detector differs, as expected, from devices where a boron rich neutron capture layer is distinct from the diode charge collection region (i.e. a conversion layer solid state detector).Diodes were fabricated from natural abundance boron (20% 10B and 80% 11B.) directly on the metal substrates and metal contacts applied to the films as grown. The total boron depth was on the order of 2 microns. This is clearly not a conversion-layer configuration. The diodes were exposed to thermal neutrons generated from a paraffin moderated plutonium-beryllium source in moderated and unmoderated, as well as shielded and unshielded experimental configurations, where the expected energy peaks at at 2.31 MeV and 2.8 MeV were clearly observed, albeit with some incomplete charge collection typical of thinner diode structures. The results are compared with other boron based thin film detectors and literature models.

Direct Measurement of Electron Drift Parameters using Depth Sensing Single Carrier CdZnTe Detectors

1997 ◽  
Vol 487 ◽  
Author(s):  
Z. He ◽  
G. F. Knoll ◽  
D. K. Wehe ◽  
Y. F. Du
Keyword(s):  
Drift Time ◽  
Wide Band ◽  
High Energy ◽  
Digital Data ◽  
Depth Sensing ◽  
Single Carrier ◽  
Analysis System ◽  
Cdznte Detectors ◽  
Data Analysis System ◽  
Carrier Charge

AbstractThis paper describes some novel techniques developed for directly measuring the electron mobility μe and mean free drift time Te in wide band gap semiconductors. These methods are based on a newly-developed digital data analysis system, in conjunction with single carrier charge sensing and depth sensing techniques. Compared with conventional methods, the new techniques are easier to implement, do not involve curve fitting, allow the use of high energy γ-rays and are not sensitive to variations in pulse rise time.

Research on Numerical Analysis and Application of the Tailing Pond

2011 ◽  
Vol 137 ◽  
pp. 232-236
Author(s):  
Li Ting Zhang ◽  
Qing Lan Qi ◽  
Qiang Li ◽  
Jun Zhang
Keyword(s):  
Numerical Simulation ◽  
Numerical Analysis ◽  
Mineral Water ◽  
Direct Conversion ◽  
New Method ◽  
Tailing Pond ◽  
Seepage Field ◽  
Water Edge ◽  
Actual Location ◽  
Saturated Surface

Determining the location of infiltration ascender line is a key problem to analyze the 3-D seepage field of the tailing pond. As the location of infiltration ascender line is determined by the actual water edge, the calculation location of saturated surface is lower because of no considering the discharge of the mineral water or the flood. When the location is determined by the direct conversion of dry beach length which is suggested in the standards, the calculation location of saturated surface is higher than the measured value. To get the actual location of saturated surface, a new method is suggested to determine the location of infiltration ascender line, called “the indirect conversion method” in the paper. On the basis of the new method, the numerical simulation is carried out to analyze the 3-D seepage field, and the numerical results are compared with the testing results to prove the rationality of the new method.

scholarly journals I/Q Imbalance Problem in SC-FDMA System with DCT and DFT Basis Functions

2015 ◽  
Vol 2015 ◽  
pp. 1-7
Author(s):  
F. S. Al-kamali ◽  
Hefdhallah Sakran ◽  
N. A. Odhah
Keyword(s):  
Multiple Access ◽  
Direct Conversion ◽  
Basis Functions ◽  
Practical Implementation ◽  
Frequency Division ◽  
Single Carrier ◽  
Imbalance Problem ◽  
Receiver Architecture ◽  
Quadrature Phase ◽  
Subcarrier Mapping

In-phase/quadrature-phase (I/Q) imbalance is one of the most serious concerns in the practical implementation of the direct conversion receiver architecture. This paper investigates and analyzes the impacts of the I/Q imbalance on the performance of the single-carrier frequency-division multiple access (SC-FDMA) system with different basis functions by computer simulations only. The suitable phase and amplitude of I and Q branches that can be utilized in SC-FDMA system are studied and determined through simulations for different I/Q imbalance scenarios and different subcarrier mapping schemes. Simulation results show that the phase and amplitude of I and Q branches have significant effects on the bit error rate (BER) performance of the SC-FDMA system.

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