High-resolution high fill factor a-Si:H sensor arrays for medical imaging

Author(s):  
Jeffrey T. Rahn ◽  
Francesco Lemmi ◽  
Richard L. Weisfield ◽  
Rene Lujan ◽  
Ping Mei ◽  
...  
1999 ◽  
Vol 557 ◽  
Author(s):  
J.T. Rahn ◽  
F. Lemmi ◽  
P. Mei ◽  
J.P. Lu ◽  
J.B. Boyce ◽  
...  

AbstractAmorphous silicon large area sensor arrays are in production for x-ray medical imaging. The most common pixel design works very well for many applications but is limited in spatial resolution because the available sensor area (the fill factor) vanishes in small pixels. One solution is a 3-dimensional structure in which the sensor is placed above the active matrix addressing. However, such high fill factor designs have previously introduce cross talk between pixels.We present data for a design in which the a-Si:H p-i-n photodiode sensor layer has a continuous i-layer and top p+-layer, and a patterned n+-layer contact to the pixel. Arrays of 64 μm and 75μm pitch have been fabricated and are the highest resolution a-Si:H arrays reported to date. The resolution matches the pixel size, and sensitivity has been improved by the high fill factor. Comparison is made between arrays with standard TFTs and TFTs with self-aligned source and drain contacts. Data line capacitance is improved by use of the self-aligned contacts.Measurements are included on the contact to bias capacitance. The high fill factor design greatly suppresses lateral leakage currents, while retaining ease of processing. Provided illumination levels remain below saturation, the resolution matches expectation for the pixel size.


2008 ◽  
Vol 1066 ◽  
Author(s):  
Yuriy Vygranenko ◽  
A. Sazonov ◽  
D. Striakhilev ◽  
J. H. Chang ◽  
G. Heiler ◽  
...  

ABSTRACTIn this paper, we report on low noise, high fill factor amorphous silicon (a-Si:H) image sensor structures for indirect radiography. Two types of the sensor arrays comprising n-i-p photodiodes and m-i-s photosensors have been fabricated. The device prototypes contain 100 × 100 pixels, with a pixel pitch of 139 μm. The active-matrix addressing is provided by low off-current TFTs. The sensors are vertically integrated onto the TFT-backplane, by implementing a 3-μm-thick low-k interlayer dielectric. This dielectric layer serves to reduce the data line capacitance and to planarize underlying topography. The detector was designed for reduced data-line resistance and parasitic coupling. Details of the device design and fabrication, along with sensor performance characteristics, are presented and discussed.


1997 ◽  
Vol 487 ◽  
Author(s):  
R. A. Street ◽  
R. B. Apte ◽  
S. E. Ready ◽  
R. L. Weisfield ◽  
P. Nylen

AbstractLarge area amorphous silicon image sensor arrays are important for x-ray medical imaging and document scanning as well as a variety of other applications where large sensor size is required. The paper first summarizes the present state of the flat panel x-ray imager technology, and compares the two main approaches for x-ray detection. We then describe the performance of a new, large area, high resolution, radiographic imager based on a single amorphous silicon array with 2304×3200 pixels, and an active area of 30×40 cm (12×1 6”).


Author(s):  
J. Kataoka ◽  
H. Matsuda ◽  
M. Yoshino ◽  
T. Miura ◽  
F. Nishikido ◽  
...  

2006 ◽  
Author(s):  
Severin Waldis ◽  
Pierre-Andre Clerc ◽  
Frederic Zamkotsian ◽  
Michael Zickar ◽  
Wilfried Noell ◽  
...  
Keyword(s):  

2003 ◽  
Vol 14 (1) ◽  
pp. 147-152 ◽  
Author(s):  
William P Taylor ◽  
John D Brazzle ◽  
Amy Bowman Osenar ◽  
Christopher J Corcoran ◽  
Ijaz H Jafri ◽  
...  

2015 ◽  
Vol 27 (11) ◽  
pp. 1900-1907 ◽  
Author(s):  
Zheng Tang ◽  
Bo Liu ◽  
Armantas Melianas ◽  
Jonas Bergqvist ◽  
Wolfgang Tress ◽  
...  

2017 ◽  
Vol 29 (47) ◽  
pp. 1703980 ◽  
Author(s):  
Ke Gao ◽  
Zonglong Zhu ◽  
Bo Xu ◽  
Sae Byeok Jo ◽  
Yuanyuan Kan ◽  
...  

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