Large-area silica films deposited on silicon substrates by a CO2 laser

1990 ◽  
Author(s):  
Tamas Szoerenyi ◽  
P. Gonzalez ◽  
M. D. Fernandez ◽  
Juan Pou ◽  
Betty M. Leon-Fong ◽  
...  
Keyword(s):  
Co2 Laser ◽  
Silicon Substrates ◽  
Large Area ◽  
Silica Films

Record Efficiency on Large Area P-Type Czochralski Silicon Substrates

2012 ◽  
Vol 51 (10S) ◽  
pp. 10NA08 ◽  
Author(s):  
Brett Hallam ◽  
Stuart Wenham ◽  
Haeseok Lee ◽  
Eunjoo Lee ◽  
Hyunwoo Lee ◽  
...  
Keyword(s):  
Silicon Substrates ◽  
Large Area ◽  
Czochralski Silicon ◽  
P Type

Fabrication of a Large-area-patterned Monolayer of Polytetrafluoroethylene Nanoparticles by Surface Charge Induced Colloidal deposition

2014 ◽  
Vol 1663 ◽  
Author(s):  
Chuan Du ◽  
Jiadao Wang ◽  
Darong Chen
Keyword(s):  
Surface Charge ◽  
Formation Mechanism ◽  
Production Efficiency ◽  
Silicon Substrates ◽  
Large Area ◽  
Whole Process ◽  
Colloidal Deposition ◽  
Novel Method ◽  
High Production ◽  
Three Body

ABSTRACTA facile and novel method of fabricating large-area-patterned monolayer of polytetrafluoroethylene(PTFE) nanoparticles was achieved using surface charge induced colloidal deposition. Chemical processes of amination and hydroxylation were used to make the silicon substrates positively and negatively charged, respectively, while the PTFE colloidal nanoparticles were anisotropic and negatively charged. After colloidal deposition, an ordered monolayer with microholes was formed on the amination surface, while an island-like monolayer was achieved on the hydroxylation surface. Both of the two kinds of monolayers were as large as 1.5 square centimeters. It is worth pointing out that these large-area-patterned monolayers were fabricated without any templates and the whole process only took several hours. The formation mechanism of the different structures can be generally attributed to the cooperation and competition of three-body, two-body and particle-wall interactions. It is believed that the interesting patterned monolayer formation mechanism, high production efficiency, good adaptability and quality will make this novel method attractive.

Sub-Wavelength Texturing for Solar Cells Using Interferometric Lithography

2006 ◽  
Vol 51 ◽  
pp. 115-120 ◽  
Author(s):  
W.L. Chiu ◽  
M.M. Alkaisi ◽  
G. Kumaravelu ◽  
R.J. Blaikie ◽  
R.J. Reeves ◽  
...  
Keyword(s):  
Defect Density ◽  
Substantial Reduction ◽  
Surface Texturing ◽  
Silicon Substrates ◽  
Textured Surface ◽  
Large Area ◽  
Periodic Patterns ◽  
Interferometric Lithography ◽  
Plasma Reflection ◽  
Sub Wavelength

We have employed Interferometric Lithography (IL) for sub-wavelength surface texturing on large area silicon substrates. Low defect density Reactive Ion Etching (RIE) processes have been developed to transfer the pattern into the silicon using SF 6 plasma. Reflection measurements on the sub-wavelength textured surface have been carried out and show a substantial reduction from ~30% to below 4% over the spectrum range from 400nm to 1200nm. IL is a mask-less lithography technique which is used to define periodic patterns. The theoretical limit of the pitch size of the structure is half of the wavelength of the light source. Hence, the sub-wavelength patterns can be achieved easily. Moreover, sub-wavelength texturing requires short RIE processes; most of the plasma-induced damage on the silicon surface can be avoided.

Silicon Carbide: Progress in Crystal Growth

1987 ◽  
Vol 97 ◽  
Author(s):  
J. Anthony Powell
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
High Temperature ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Single Crystal Silicon ◽  
Silicon Substrates ◽  
Large Area ◽  
High Quality ◽  
Crystal Silicon

ABSTRACTSilicon carbide (SiC), with a favorable combination of semiconducting and refractory properties, has long been a candidate for high temperature semiconductor applications. Research on processes for producing the needed large-area high quality single crystals has proceeded sporadically for many years. Two characteristics of SiC have aggravated the problem of its crystal growth. First, it cannot be melted at any reasonable pressure, and second, it forms many different crystalline structures, called polytypes. Recent progress in the development of two crystal growth processes will be described. These processes are the modified Lely process for the growth of the alpha polytypes (e.g. 6H SiC), and a process for the epitaxial growth of the beta polytype (i.e. 3C or cubic SiC) on single crystal silicon substrates. A discussion of the semiconducting qualities of crystals grown by various techniques will also be included.

Controlled facile synthesis, growth mechanism, and exothermic properties of large-area Co3O4 nanowalls and nanowires on silicon substrates

2012 ◽  
Vol 112 (1) ◽  
pp. 014310 ◽  
Author(s):  
Zhiqiang Qiao ◽  
Daguo Xu ◽  
Fude Nie ◽  
Guangcheng Yang ◽  
Kaili Zhang
Keyword(s):  
Growth Mechanism ◽  
Silicon Substrates ◽  
Large Area ◽  
Facile Synthesis

A Led Based on Porous Polycrystalline Silicon

1997 ◽  
Vol 486 ◽  
Author(s):  
W. N. Huang ◽  
K. Y. Tong ◽  
P. W. Chan
Keyword(s):  
Silicon Substrate ◽  
Polycrystalline Silicon ◽  
Polycrystalline Material ◽  
Forward Bias ◽  
Depletion Region ◽  
Silicon Substrates ◽  
Large Area ◽  
Electron Hole ◽  
Bright Spots ◽  
Current Characteristics

AbstractPrevious studies on electroluminescence in porous silicon were based on crystalline wafers. In this paper, we shall report the characteristics of a LED based on porous effects in a cast polycrystalline silicon substrate. A layer of porous region was first formed on a cast polycrystalline silicon substrate by anodization, followed by the deposition of a semitransparent Au layer. Under forward bias, the LED emits stable yellowish white light (with the presence of bright spots) for currents above 20 mA/cm2. From the electroluminescence spectra measured, we suggest that the emission is due to the recombination of electron-hole pairs in a microplasma region. We propose a model where the microplasma is present in the depletion region of the heterojunction formed between the bulk polysilicon and the surface porous polysilicon. The defects and grain boundaries in a polycrystalline material facilitate the formation of such microplasma. The heterojunction model will also be used to explain the current characteristics of the LED. The effect on the LED characteristics due to indium coating on the porous substrate prior to Au deposition was studied, and the results agree with the heterojunction model. Our work shows that cast polycrystalline silicon substrates have potential for LED fabrication in cheap and large area applications.

The nucleation and growth of large area, highly oriented diamond films on silicon substrates

1998 ◽  
Vol 7 (2-5) ◽  
pp. 283-288 ◽  
Author(s):  
A. Flöter ◽  
H. Güttler ◽  
G. Schulz ◽  
D. Steinbach ◽  
C. Lutz-Elsner ◽  
...  
Keyword(s):  
Diamond Films ◽  
Nucleation And Growth ◽  
Silicon Substrates ◽  
Large Area

Amorphous Sol-Gel Insulating Films

1992 ◽  
Vol 284 ◽  
Author(s):  
C. Jeffrey Brinker ◽  
William L. Warren ◽  
Monica N. Logan ◽  
Carol S. Ashley
Keyword(s):  
Capillary Pressure ◽  
Film Formation ◽  
Sol Gel ◽  
Silicon Substrates ◽  
Inorganic Polymers ◽  
Silica Films ◽  
Insulating Films ◽  
Polymer Reaction ◽  
Passivation Layers ◽  
Relationship Of

ABSTRACTThe porosity of sol-gel thin films may be tailored for specific applications through control of the size and structure of inorganic polymers within the coating sol, the extent of polymer reaction and interpenetration during film formation, and the magnitude of the capillary pressure exerted during the final stage of drying. By maximizing the capillary pressure and avoiding excessive condensation, dense insulating films may be prepared as passivation layers on silicon substrates. Such films can exhibit excellent dielectric integrity, viz., low interface trap densities and insulating properties approaching those of thermally grown SiO2. Alternatively, through exploitation of the scaling relationship of mass and density of fractal objects, silica films can be prepared that show a variation in porosity (7–29 %) and refractive index (1.42 ndash;1.31) desired for applications in sensors, membranes, and photonics.

scholarly journals Growth of III-nitride photonic structures on large area silicon substrates

2006 ◽  
Vol 88 (17) ◽  
pp. 171909 ◽  
Author(s):  
J. Li ◽  
J. Y. Lin ◽  
H. X. Jiang
Keyword(s):  
Silicon Substrates ◽  
Large Area ◽  
Photonic Structures
Sign in / Sign up

Export Citation Format

Share Document