Controlled facile synthesis, growth mechanism, and exothermic properties of large-area Co3O4 nanowalls and nanowires on silicon substrates

2012 ◽  
Vol 112 (1) ◽  
pp. 014310 ◽  
Author(s):  
Zhiqiang Qiao ◽  
Daguo Xu ◽  
Fude Nie ◽  
Guangcheng Yang ◽  
Kaili Zhang
Keyword(s):  
Growth Mechanism ◽  
Silicon Substrates ◽  
Large Area ◽  
Facile Synthesis

Facile Synthesis, Morphology Evolution and Tunable Luminescence of NaGdF4:Yb,Er Nanorods with Various Aspect Ratios

NANO ◽  
2018 ◽  
Vol 13 (08) ◽  
pp. 1850093 ◽  
Author(s):  
Shasha Gai ◽  
Jiqing Jiao ◽  
Wei Wei ◽  
Yao Li ◽  
Lihua Liu ◽  
...  
Keyword(s):  
Energy Level ◽  
Hydrothermal Method ◽  
Growth Mechanism ◽  
Morphology Evolution ◽  
Schematic Diagram ◽  
Facile Synthesis ◽  
Reaction Conditions ◽  
Facile Hydrothermal Method ◽  
Aspect Ratios ◽  
Lower Temperature

The well-defined NaGdF4:Yb,Er nanorods (NRs) with various aspect ratios were synthesized using a facile hydrothermal method. The morphology and crystal phase of NRs could be controlled by reaction conditions. NaGdF4:Yb,Er NRs with various aspect ratios could be synthesized and their upconversion (UC) luminescence was tuned. It is displayed that the NRs with aspect ratios about 5 exhibited the strongest UC luminescence among samples. The growth mechanism and morphology transition of NRs had been deduced by schematic diagram. And UC mechanism had been determined by energy level diagrams. Compared with previous reports, the work provided a facial method for UCNRs with various aspect ratios at lower temperature.

Facile synthesis of ultrathin NiCo2S4 nano-petals inspired by blooming buds for high-performance supercapacitors

2017 ◽  
Vol 5 (15) ◽  
pp. 7144-7152 ◽  
Author(s):  
Yuxiang Wen ◽  
Shanglong Peng ◽  
Zilei Wang ◽  
Jiaxin Hao ◽  
Tianfeng Qin ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
High Performance ◽  
Facile Synthesis

3D petal-like NiCo2S4 nanostructures have been fabricated via a simple, mild and efficient hydrothermal strategy and the growth mechanism of NiCo2S4 nano-petals has been investigated.

Record Efficiency on Large Area P-Type Czochralski Silicon Substrates

2012 ◽  
Vol 51 (10S) ◽  
pp. 10NA08 ◽  
Author(s):  
Brett Hallam ◽  
Stuart Wenham ◽  
Haeseok Lee ◽  
Eunjoo Lee ◽  
Hyunwoo Lee ◽  
...  
Keyword(s):  
Silicon Substrates ◽  
Large Area ◽  
Czochralski Silicon ◽  
P Type

Fabrication of a Large-area-patterned Monolayer of Polytetrafluoroethylene Nanoparticles by Surface Charge Induced Colloidal deposition

2014 ◽  
Vol 1663 ◽  
Author(s):  
Chuan Du ◽  
Jiadao Wang ◽  
Darong Chen
Keyword(s):  
Surface Charge ◽  
Formation Mechanism ◽  
Production Efficiency ◽  
Silicon Substrates ◽  
Large Area ◽  
Whole Process ◽  
Colloidal Deposition ◽  
Novel Method ◽  
High Production ◽  
Three Body

ABSTRACTA facile and novel method of fabricating large-area-patterned monolayer of polytetrafluoroethylene(PTFE) nanoparticles was achieved using surface charge induced colloidal deposition. Chemical processes of amination and hydroxylation were used to make the silicon substrates positively and negatively charged, respectively, while the PTFE colloidal nanoparticles were anisotropic and negatively charged. After colloidal deposition, an ordered monolayer with microholes was formed on the amination surface, while an island-like monolayer was achieved on the hydroxylation surface. Both of the two kinds of monolayers were as large as 1.5 square centimeters. It is worth pointing out that these large-area-patterned monolayers were fabricated without any templates and the whole process only took several hours. The formation mechanism of the different structures can be generally attributed to the cooperation and competition of three-body, two-body and particle-wall interactions. It is believed that the interesting patterned monolayer formation mechanism, high production efficiency, good adaptability and quality will make this novel method attractive.

Facile synthesis of zirconium trisulfide and hafnium trisulfide nanobelts: Growth mechanism and Raman spectroscopy

2011 ◽  
Vol 13 (5) ◽  
pp. 1166-1171 ◽  
Author(s):  
Hua Jin ◽  
Dan Cheng ◽  
Jixue Li ◽  
Xuejing Cao ◽  
Benxian Li ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Growth Mechanism ◽  
Facile Synthesis

Sub-Wavelength Texturing for Solar Cells Using Interferometric Lithography

2006 ◽  
Vol 51 ◽  
pp. 115-120 ◽  
Author(s):  
W.L. Chiu ◽  
M.M. Alkaisi ◽  
G. Kumaravelu ◽  
R.J. Blaikie ◽  
R.J. Reeves ◽  
...  
Keyword(s):  
Defect Density ◽  
Substantial Reduction ◽  
Surface Texturing ◽  
Silicon Substrates ◽  
Textured Surface ◽  
Large Area ◽  
Periodic Patterns ◽  
Interferometric Lithography ◽  
Plasma Reflection ◽  
Sub Wavelength

We have employed Interferometric Lithography (IL) for sub-wavelength surface texturing on large area silicon substrates. Low defect density Reactive Ion Etching (RIE) processes have been developed to transfer the pattern into the silicon using SF 6 plasma. Reflection measurements on the sub-wavelength textured surface have been carried out and show a substantial reduction from ~30% to below 4% over the spectrum range from 400nm to 1200nm. IL is a mask-less lithography technique which is used to define periodic patterns. The theoretical limit of the pitch size of the structure is half of the wavelength of the light source. Hence, the sub-wavelength patterns can be achieved easily. Moreover, sub-wavelength texturing requires short RIE processes; most of the plasma-induced damage on the silicon surface can be avoided.

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