Multichannel analyzer/detector system for high-speed high-resolution powder diffraction

Author(s):  
D. P. Siddons ◽  
Zhijian Yin ◽  
Lars Furenlid ◽  
P. Pietraski ◽  
Zheng Li ◽  
...  
2008 ◽  
Vol 15 (5) ◽  
pp. 427-432 ◽  
Author(s):  
Peter L. Lee ◽  
Deming Shu ◽  
Mohan Ramanathan ◽  
Curt Preissner ◽  
Jun Wang ◽  
...  

1998 ◽  
Vol 4 (6) ◽  
pp. 622-631 ◽  
Author(s):  
L. Strüder ◽  
N. Meidinger ◽  
D. Stotter ◽  
J. Kemmer ◽  
P. Lechner ◽  
...  

Originally designed as position-sensitive detectors for particle tracking, silicon drift detectors (SDDs) are now used for high-count rate X-ray spectroscopy, operating close to room temperature. Their low-capacitance read-node concept places them among the fastest high-resolution detector systems. They have been used in a new spectrum of experiments in the wide field of X-ray spectroscopy: fluorescent analysis, diffrac-tometry, materials analysis, and synchrotron experiments such as X-ray holography and element imaging in scanning electron microscopes. The fact that the detector system can be used at room temperature with good spectroscopic performance and at −10°C with excellent energy resolution, avoiding liquid nitrogen for cooling and high-quality vacuum, guarantees a large variety of new applications, independent of the laboratory environment. A brief description of the device principles is followed by basics on low noise amplification. The performance results of a complete detector system are presented as well as some dedicated applications already realized, including use in a surface mapping instrument and use of a “mini-spectrometer” for the analysis of works of art. Fully depleted pn-charge-coupled devices (pn-CCDs) have been fabricated for the European X-ray Multi-Mirror mission (XMM) and the German X-ray satellite ABRIXAS, enabling high-speed, low-noise, position-resolving X-ray spectroscopy. The detector was designed and fabricated with a homogeneously sensitive area of 36 cm2. At −70°C it has a noise of 4 e- rms, with a readout time of the total focal plane array of 4 msec. The maximum count rate for single photon counting was 105 cps under flat field conditions. In the integration mode, more than 109 cps can be detected at 6 keV. Its position resolution is on the order of 100 μm. The quantum efficiency is higher than 90%, ranging from carbon K X-rays (277 eV) up to 10 keV.


Author(s):  
Kenneth Krieg ◽  
Richard Qi ◽  
Douglas Thomson ◽  
Greg Bridges

Abstract A contact probing system for surface imaging and real-time signal measurement of deep sub-micron integrated circuits is discussed. The probe fits on a standard probe-station and utilizes a conductive atomic force microscope tip to rapidly measure the surface topography and acquire real-time highfrequency signals from features as small as 0.18 micron. The micromachined probe structure minimizes parasitic coupling and the probe achieves a bandwidth greater than 3 GHz, with a capacitive loading of less than 120 fF. High-resolution images of submicron structures and waveforms acquired from high-speed devices are presented.


1960 ◽  
Vol 38 (12) ◽  
pp. 1577-1585 ◽  
Author(s):  
Agda Artna ◽  
Margaret E. Law

The 52.8-hour activity of Pm149 has been investigated using a high resolution beta spectrometer, a lens type coincidence spectrometer, and a scintillation spectrometer in conjunction with a multichannel analyzer. The beta spectrum was found to consist of two groups with maximum energies of 1.072 ± 0.002 Mev and 0.786 ± 0.004 Mev, and intensities of 97.1 ± 0.4% and 2.9 ± 0.4% respectively. A gamma ray of energy 285.7 ± 0.3 kev was found to be in coincidence with the 0.786-Mev beta group. No other gamma rays with intensities greater than 0.1% were found. The K conversion coefficient for the 286-kev transition was measured to be 0.075 ± 0.008. This together with the values of 6.5 ± 0.7 and 4 ± 1 obtained for the K/L and L/M conversion ratios respectively indicate that this transition is M1 in character with less than 10% E2 admixture.


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