Wide-range tunable semiconductor lasers using multiple quantum wells of different widths

1998 ◽  
Author(s):  
Bor-Lin Lee ◽  
Ching-Fuh Lin ◽  
Miin-Jang Chen
Keyword(s):  
Quantum Wells ◽  
Semiconductor Lasers ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Wide Range

Strain-Compensation in InAsP/GaInP Multiple Quantum Wells for 1.3 μm Wavelength

1995 ◽  
Vol 379 ◽  
Author(s):  
X. B. Mei ◽  
C.W. Tu
Keyword(s):  
Quantum Wells ◽  
Lattice Mismatch ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Narrow Line Width ◽  
Gas Source ◽  
Wide Range ◽  
Strain Compensation

ABSTRACTWe show that high-quality strain-compensated InAsxP1−x/GayIn1−yP multiple quantum wells (MQWs) can be grown by gas-source molecular beam epitaxy on InP substrates even though the InAsxP1−x quantum wells have a large lattice mismatch (∼ 1.3%) with respect to InP. Very sharp satellite peaks in double-crystal X-ray diffraction and narrow line width in low-temperature photoluminescence (FWHM of 4 meV at 9 K) are obtained from MQWs of up to 50 periods. Strain compensation allows a wide range of the net strain around the ideally compensated point, where the net strain equals zero, without degrading crystalline quality.

scholarly journals Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature

Micromachines ◽  
2021 ◽  
Vol 12 (9) ◽  
pp. 1112
Author(s):  
Satoshi Iba ◽  
Ryogo Okamoto ◽  
Koki Obu ◽  
Yuma Obata ◽  
Yuzo Ohno
Keyword(s):  
Quantum Wells ◽  
Spin Dynamics ◽  
Relaxation Times ◽  
Flux Ratio ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Electron Spin Relaxation ◽  
Carrier Lifetimes ◽  
Wide Range

We have systematically investigated the structural properties, carrier lifetimes, namely, photoluminescence (PL) lifetimes (τPL), and electron spin relaxation times (τs) in (110) GaAs/AlGaAs multiple quantum wells (MQWs) by using time-resolved PL measurements. The MQWs were grown by molecular beam epitaxy within a wide range of the growth temperature Tg (430–600 °C) and a high V/III flux ratio using As2. At 530 °C < Tg < 580 °C, we found that the quality of the heterointerfaces is significantly improved, resulting in τPL~40 ns at RT, one order of magnitude longer than those reported so far. Long τs (~6 ns) is also observed at RT.

Modulator Structure Using In(As, P)/lnP Strained Multiple Quantum Wells Grown By Gas-Source MBE

1991 ◽  
Vol 228 ◽  
Author(s):  
H. Q. Hou ◽  
T. P. Chin ◽  
B. W. Liang ◽  
C. W Tu
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Material System ◽  
Gas Source ◽  
Transmission Electron ◽  
Wide Range ◽  
Excitonic Emission ◽  
Modulator Structure ◽  
Gas Source Mbe

ABSTRACTIn(As, P)/InP strained multiple quantum wells (SMQW's) were grown with gas-source molecular-beam epitaxy (GSMBE). A successful control of the As composition was achieved over a wide range by using two techniques. High-quality samples were characterized structurally and optically by x-ray diffractometry, transmission electron microscopy (TEM), photoluminescence (PL) and absorption measurements. Excitonic emission energy and the critical layer thickness of In(As, P)/InP SMQW's are calculated as a function of the As composition. The results show that 1.06, 1.3 and 1.55 μm excitonic emission can be achieved at room temperature using this material system. We also discuss the perspective of using In(As, P)/InP SMQW's for modulator application.

FEMTOSECOND SPECTRAL HOLE-BURNING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Multiple Quantum ◽  
Spectral Hole

FAR INFRARED MAGNETO-ABSORPTION STUDY OF BARRIER IMPURITIES AND SCREENING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-239-C5-242 ◽  
Author(s):  
E. GLASER ◽  
B. V. SHANABROOK ◽  
R. J. WAGNER ◽  
R. L. HAWKINS ◽  
W. J. MOORE ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Far Infrared ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Absorption Study
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