Modulator Structure Using In(As, P)/lnP Strained Multiple Quantum Wells Grown By Gas-Source MBE

1991 ◽  
Vol 228 ◽  
Author(s):  
H. Q. Hou ◽  
T. P. Chin ◽  
B. W. Liang ◽  
C. W Tu
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Material System ◽  
Gas Source ◽  
Transmission Electron ◽  
Wide Range ◽  
Excitonic Emission ◽  
Modulator Structure ◽  
Gas Source Mbe

ABSTRACTIn(As, P)/InP strained multiple quantum wells (SMQW's) were grown with gas-source molecular-beam epitaxy (GSMBE). A successful control of the As composition was achieved over a wide range by using two techniques. High-quality samples were characterized structurally and optically by x-ray diffractometry, transmission electron microscopy (TEM), photoluminescence (PL) and absorption measurements. Excitonic emission energy and the critical layer thickness of In(As, P)/InP SMQW's are calculated as a function of the As composition. The results show that 1.06, 1.3 and 1.55 μm excitonic emission can be achieved at room temperature using this material system. We also discuss the perspective of using In(As, P)/InP SMQW's for modulator application.

Strain-Compensation in InAsP/GaInP Multiple Quantum Wells for 1.3 μm Wavelength

1995 ◽  
Vol 379 ◽  
Author(s):  
X. B. Mei ◽  
C.W. Tu
Keyword(s):  
Quantum Wells ◽  
Lattice Mismatch ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Narrow Line Width ◽  
Gas Source ◽  
Wide Range ◽  
Strain Compensation

ABSTRACTWe show that high-quality strain-compensated InAsxP1−x/GayIn1−yP multiple quantum wells (MQWs) can be grown by gas-source molecular beam epitaxy on InP substrates even though the InAsxP1−x quantum wells have a large lattice mismatch (∼ 1.3%) with respect to InP. Very sharp satellite peaks in double-crystal X-ray diffraction and narrow line width in low-temperature photoluminescence (FWHM of 4 meV at 9 K) are obtained from MQWs of up to 50 periods. Strain compensation allows a wide range of the net strain around the ideally compensated point, where the net strain equals zero, without degrading crystalline quality.

Photoluminescence investigation of GaInP/GaAs multiple quantum wells grown on (001) and (311) B GaAs surfaces by gas source molecular beam epitaxy

1998 ◽  
Vol 83 (12) ◽  
pp. 7900-7902 ◽  
Author(s):  
Xiaobing Li ◽  
Dianzhao Sun ◽  
Jianrong Dong ◽  
Jianping Li ◽  
Meiying Kong ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Gas Source
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