Use of resonance-enhanced multiphoton ionization (REMPI) for probing hydrogen atoms in diamond chemical vapor deposition using a hot filament reactor

1998 ◽  
Author(s):  
Stephen A. Redman ◽  
Stephen R. Langford ◽  
Keith N. Rosser ◽  
Michael N. R. Ashfold
1996 ◽  
Vol 67 (4) ◽  
pp. 1546-1554 ◽  
Author(s):  
K. L. Menningen ◽  
M. A. Childs ◽  
L. W. Anderson ◽  
J. E. Lawler

2001 ◽  
Vol 15 (17n19) ◽  
pp. 756-759 ◽  
Author(s):  
P. SALAZAR ◽  
F. CHÁVEZ ◽  
F. SILVA-ANDRADE ◽  
A. V. ILINSKII ◽  
N. MORALES ◽  
...  

The photoluminescence (PL) properties of hydrogen (H) rich silicon oxide films prepared by hot filament enhanced chemical vapor deposition (HFCVD) have been studied. The observed PL change follow the change in the hydrogen incorporation, detected by transmission Fourier transfonn spectroscopy (FTIR). FTIR spectra show that the oxygen and hydrogen atoms are bonded to the same silicon atom. There is no evidence from the formation of OH groups.


1997 ◽  
Vol 107 (15) ◽  
pp. 5918-5928 ◽  
Author(s):  
Volker Zumbach ◽  
Jörg Schäfer ◽  
Jens Tobai ◽  
Michael Ridder ◽  
Thomas Dreier ◽  
...  

2015 ◽  
Vol 48 (6) ◽  
pp. 104-109
Author(s):  
Youn-Joon Baik ◽  
Do-Hyun Kwon ◽  
Jong-Keuk Park ◽  
Wook-Seong Lee

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 426
Author(s):  
Byeong-Kwan Song ◽  
Hwan-Young Kim ◽  
Kun-Su Kim ◽  
Jeong-Woo Yang ◽  
Nong-Moon Hwang

Although the growth rate of diamond increased with increasing methane concentration at the filament temperature of 2100 °C during a hot filament chemical vapor deposition (HFCVD), it decreased with increasing methane concentration from 1% CH4 –99% H2 to 3% CH4 –97% H2 at 1900 °C. We investigated this unusual dependence of the growth rate on the methane concentration, which might give insight into the growth mechanism of a diamond. One possibility would be that the high methane concentration increases the non-diamond phase, which is then etched faster by atomic hydrogen, resulting in a decrease in the growth rate with increasing methane concentration. At 3% CH4 –97% H2, the graphite was coated on the hot filament both at 1900 °C and 2100 °C. The graphite coating on the filament decreased the number of electrons emitted from the hot filament. The electron emission at 3% CH4 –97% H2 was 13 times less than that at 1% CH4 –99% H2 at the filament temperature of 1900 °C. The lower number of electrons at 3% CH4 –97% H2 was attributed to the formation of the non-diamond phase, which etched faster than diamond, resulting in a lower growth rate.


2003 ◽  
Vol 372 (3-4) ◽  
pp. 320-324 ◽  
Author(s):  
Y.H Tang ◽  
X.T Zhou ◽  
Y.F Hu ◽  
C.S Lee ◽  
S.T Lee ◽  
...  

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