CMOS compatibiltity of high-aspect-ratio micromachining (HARM) in bonded silicon-on-insulator (BSOI)

1998 ◽  
Author(s):  
Mark E. McNie ◽  
David O. King
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Silicon On Insulator

High aspect ratio cylindrical nanopores in silicon-on-insulator substrates

2007 ◽  
Vol 51 (10) ◽  
pp. 1391-1397 ◽  
Author(s):  
Leo Petrossian ◽  
Seth J. Wilk ◽  
Punarvasu Joshi ◽  
Sahar Hihath ◽  
Jonathan D. Posner ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Silicon On Insulator

Mode Converters for Coupling to High Aspect Ratio Silicon-on-Insulator Channel Waveguides

2007 ◽  
Vol 19 (11) ◽  
pp. 855-857 ◽  
Author(s):  
J. H. Schmid ◽  
B. Lamontagne ◽  
P. Cheben ◽  
A. Delage ◽  
S. Janz ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Silicon On Insulator ◽  
Mode Converters ◽  
Channel Waveguides

scholarly journals Realization of Three-Dimensionally MEMS Stacked Comb Structures for Microactuators Using Low-Temperature Multi-Wafer Bonding with Self-Alignment Techniques in CMOS-Compatible Processes

Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1481
Author(s):  
Adrian J. T. Teo ◽  
King Ho Holden Li
Keyword(s):  
Low Temperature ◽  
Aspect Ratio ◽  
Resonant Frequency ◽  
Tilt Angle ◽  
Wafer Bonding ◽  
High Aspect Ratio ◽  
Silicon On Insulator ◽  
Future Design ◽  
Comb Structure ◽  
Cmos Compatible

A high-aspect-ratio three-dimensionally (3D) stacked comb structure for micromirror application is demonstrated by wafer bonding technology in CMOS-compatible processes in this work. A vertically stacked comb structure is designed to circumvent any misalignment issues that could arise from multiple wafer bonding. These out-of-plane comb drives are used for the bias actuation to achieve a larger tilt angle for micromirrors. The high-aspect-ratio mechanical structure is realized by the deep reactive ion etching of silicon, and the notching effect in silicon-on-insulator (SOI) wafers is minimized. The low-temperature bonding of two patterned wafers is achieved with fusion bonding, and a high bond strength up to 2.5 J/m2 is obtained, which sustains subsequent processing steps. Furthermore, the dependency of resonant frequency on device dimensions is studied systematically, which provides useful guidelines for future design and application. A finalized device fabricated here was also tested to have a resonant frequency of 17.57 kHz and a tilt angle of 70° under an AC bias voltage of 2 V.

High aspect ratio sub-micron trenches on silicon-on-insulator and bulk silicon

2011 ◽  
Vol 88 (8) ◽  
pp. 2556-2558 ◽  
Author(s):  
M. Hermersdorf ◽  
C. Hibert ◽  
D. Grogg ◽  
A.M. Ionescu
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Silicon On Insulator ◽  
Bulk Silicon
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