Characterization of 128x192 Si:Ga focal plane arrays: study of nonuniformity, stability of its correction, and application for the CRYSTAL camera

1998 ◽  
Author(s):  
Sabine Suffis ◽  
Marcel Caes ◽  
Philippe Deliot ◽  
Joel Deschamps ◽  
Michel Tauvy
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays

Total ionizing dose and proton radiation characterization of Si P-i-N visible hybrid focal plane arrays

2005 ◽  
Author(s):  
John E. Hubbs ◽  
Mark E. Gramer ◽  
Douglas C. Arrington ◽  
Gary A. Dole ◽  
Diana Maestas-Jepson ◽  
...  
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays ◽  
Proton Radiation ◽  
Total Ionizing Dose

Characterization of Microlens Structures Fabricated in Cd1-xZnxTe and Cdte/Si IRFPA Substrate Materials

2001 ◽  
Vol 7 (S2) ◽  
pp. 570-571
Author(s):  
P.R. Boyd ◽  
U. Lee ◽  
J. Little ◽  
D. Morton ◽  
A.J. Stoltz ◽  
...  
Keyword(s):  
Focal Plane ◽  
State Of The Art ◽  
Signal To Noise Ratio ◽  
Infrared Detector ◽  
Focal Plane Arrays ◽  
Readout Circuit ◽  
Antireflective Coatings ◽  
Large Area ◽  
Current State

The ternary II-VT alloy Hg1-xCdxTe has become the material of choice for many infrared detector applications. Current state of the art Hg1-xCdxTe infrared focal plane arrays (IRFPAs) are constructed as hybrid structures consisting of an epitaxial sensing layer of Hg1-xCdxTe on either a CdTe or Cd1-xZnxTe substrate, hybridized to a silicon readout circuit chip. For backside illuminated structures, like the typical infrared Hg1-xCdxTe detector array, multilayer antireflective coatings (AR) are required on the backside of the detector chip. The next generation of higher performance IRFPAs will be based on high densities of smaller detector pixels fabricated on large area monolithic heteroepitaxial substrate materials. Since the ultimate performance of photovoltaic diodes of this type is determined by the signal to noise ratio of the device, reducing the size of the pixels while lowering the undesirable noise currents in the devices also reduces the amount of signal generated by the diode.

InAs/GaSb superlattice focal plane arrays for high-resolution thermal imaging

2006 ◽  
Vol 14 (1) ◽  
Author(s):  
R. Rehm ◽  
M. Walther ◽  
J. Schmitz ◽  
J. Fleißner ◽  
F. Fuchs ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Thermal Imaging ◽  
Focal Plane ◽  
Focal Plane Arrays ◽  
Camera System ◽  
Fully Integrated ◽  
Superlattice Structure ◽  
Short Period ◽  
Noise Equivalent Temperature Difference

AbstractThe first fully operational mid-IR (3–5 μm) 256×256 IR-FPA camera system based on a type-II InAs/GaSb short-period superlattice showing an excellent noise equivalent temperature difference below 10 mK and a very uniform performance has been realized. We report on the development and fabrication of the detecor chip, i.e., epitaxy, processing technology and electro-optical characterization of fully integrated InAs/GaSb superlattice focal plane arrays. While the superlattice design employed for the first demonstrator camera yielded a quantum efficiency around 30%, a superlattice structure grown with a thicker active layer and an optimized V/III BEP ratio during growth of the InAs layers exhibits a significant increase in quantum efficiency. Quantitative responsivity measurements reveal a quantum efficiency of about 60% for InAs/GaSb superlattice focal plane arrays after implementing this design improvement.

Characterization of phase artifacts for focal plane arrays

2004 ◽  
Author(s):  
Jose M. Lopez-Alonso ◽  
Javier Alda
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays

Characterization of post-correction uniformity on infrared focal plane arrays

1995 ◽  
Author(s):  
John J. O'Neill III ◽  
Christopher R. Costanzo ◽  
David R. Kaplan
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays ◽  
Infrared Focal Plane Arrays
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