Fine structure of excitons in II-VI quantum wells and dots

1998 ◽  
Author(s):  
Joachim Puls ◽  
Fritz Henneberger
Keyword(s):  
Fine Structure ◽  
Quantum Wells

Fine Structure of Levels and Piezospectroscopy of A+ Centers in GaAs/AlGaAs Quantum Wells

2018 ◽  
Vol 60 (2) ◽  
pp. 339-346
Author(s):  
P. V. Petrov ◽  
I. A. Kokurin ◽  
Yu. L. Ivánov ◽  
G. E. Cirlin ◽  
V. E. Sedov ◽  
...  
Keyword(s):  
Fine Structure ◽  
Quantum Wells

Fine-structure features due to wave-function localization in coupled GaAs-AlxGa1−xAs quantum wells

1992 ◽  
Vol 46 (8) ◽  
pp. 4748-4751 ◽  
Author(s):  
D. C. Reynolds ◽  
K. R. Evans ◽  
B. Jogai ◽  
C. E. Stutz ◽  
P. W. Yu
Keyword(s):  
Wave Function ◽  
Fine Structure ◽  
Quantum Wells

Fine structure of exciton levels in quantum wells

1997 ◽  
Vol 104 (8) ◽  
pp. 465-468 ◽  
Author(s):  
Yu.G. Kusrayev ◽  
B.P. Zakharchenya ◽  
G. Karczewski ◽  
T. Wojtowicz ◽  
J. Kossut
Keyword(s):  
Fine Structure ◽  
Quantum Wells

Fine structure of localized exciton levels in quantum wells

1998 ◽  
Vol 86 (2) ◽  
pp. 388-394 ◽  
Author(s):  
S. V. Gupalov ◽  
E. L. Ivchenko ◽  
A. V. Kavokin
Keyword(s):  
Fine Structure ◽  
Quantum Wells

Fine structure of the emission spectrum of a two-dimensional electron–hole liquid in SiGe/Si quantum wells

JETP Letters ◽  
2016 ◽  
Vol 104 (3) ◽  
pp. 163-168 ◽  
Author(s):  
S. N. Nikolaev ◽  
V. S. Krivobok ◽  
V. S. Bagaev ◽  
E. E. Onishchenko ◽  
A. V. Novikov ◽  
...  
Keyword(s):  
Fine Structure ◽  
Emission Spectrum ◽  
Quantum Wells ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Hole

The energy-fine structure of GaInNAs∕GaAs multiple quantum wells grown at different temperatures and postgrown annealed

2004 ◽  
Vol 96 (5) ◽  
pp. 2909-2913 ◽  
Author(s):  
R. Kudrawiec ◽  
E.-M. Pavelescu ◽  
J. Andrzejewski ◽  
J. Misiewicz ◽  
A. Gheorghiu ◽  
...  
Keyword(s):  
Fine Structure ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Different Temperatures

Al Compositional Profile In Algaas/Gaas Quantum Wells

1999 ◽  
Vol 5 (S2) ◽  
pp. 168-169
Author(s):  
D. Q. Cai ◽  
J. Zou ◽  
D. J. H. Cockayne.
Keyword(s):  
Fine Structure ◽  
Sample Preparation ◽  
Quantum Well ◽  
Quantum Wells ◽  
Ccd Camera ◽  
Bright Field ◽  
Compositional Profile ◽  
Set Up ◽  
Cleavage Method

The TEM thickness fringe method [1] was developed as a potential routine technique to determine compositional profiles in quantum well systems. This technique has the advantages that a) TEM sample preparation is simple and the experiment is easy to set up and b) thickness fringe profiles show fine structure which is sensitive to chemistry [2]. In this paper, we demonstrate the ability of the method to measure the chemical abruptness at the interface between two layers of different composition.90° wedge AlGaAs/GaAs TEM samples were prepared by the cleavage method, where the samples were cleaved along two orthogonal {110} planes. The samples were mounted on Cu grids and were investigated in a Philips EM430 TEM. Samples were orientated to the [100] direction precisely and bright-field images were acquired digitally using a CCD camera. Fig 1 shows an enlarged image of thickness fringes.Since the edges of samples are 90° wedges, the thickness at any point can be accurately determined and the fringe profile can be compared with fringe profiles calculated for a range of Al compositions.

Fine-structure N-polarity InN∕InGaN multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy

2005 ◽  
Vol 86 (26) ◽  
pp. 261903 ◽  
Author(s):  
Song-Bek Che ◽  
Wataru Terashima ◽  
Yoshihiro Ishitani ◽  
Akihiko Yoshikawa ◽  
Takeyoshi Matsuda ◽  
...  
Keyword(s):  
Fine Structure ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum
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