Role of nonequilibrium carrier distributions in multiple quantum well InGaAsP-based lasers

1998 ◽  
Author(s):  
Mark S. Hybertsen ◽  
Muhammad A. Alam ◽  
Gene A. Baraff ◽  
Anatoly A. Grinberg ◽  
R. Kent Smith
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Nonequilibrium Carrier ◽  
Multiple Quantum

Photoluminescence of InGaN/GaN and AlGaN/GaN multiple quantum well structures: role of depletion fields and polarization fields

2003 ◽  
Vol 195 (3) ◽  
pp. 523-527 ◽  
Author(s):  
B. Monemar ◽  
P. P. Paskov ◽  
H. Haratizadeh ◽  
P. O. Holtz ◽  
J. P. Bergman ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Photoluminescence of InGaN/GaN and AlGaN/GaN multiple quantum well structures: role of depletion fields and polarization fields

2003 ◽  
Vol 195 (3) ◽  
pp. 477-477
Author(s):  
B. Monemar ◽  
P. P. Paskov ◽  
H. Haratizadeh ◽  
P. O. Holtz ◽  
J. P. Bergman ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Role of Localized Quantum Well Excitons in InGaN Quantum Well Structure Correlated with Microstructural Analysis

2000 ◽  
Vol 639 ◽  
Author(s):  
S. F. Chichibu ◽  
T. Sota ◽  
S. Nakamura
Keyword(s):  
Quantum Well ◽  
Microstructural Analysis ◽  
Multiple Quantum Well ◽  
Compositional Analysis ◽  
Diffraction Measurement ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Quantum Disk ◽  
Multiple Quantum Well Laser

ABSTRACTInxGa1−xN multiple-quantum-well laser diode structure, which lased at 405 nm, was shown to have atomically-flat interfaces between each layer. Nanometer-probe compositional analysis showed that InN mole fraction, x, in the wells and barriers are approximately 6 % and 2 %, respectively, which agreed with the result obtained from high-resolution x-ray diffraction measurement. The Stokes-like shift (SS) at 300 K was 49 meV, being approximately 65 % of the luminescence linewidth. The localization depth, E0, of qunatum-well (QW) excitons was estimated to be 35 meV at 300 K though the compositional fluctuation in the well was as small as 1 % or less (detection limit) within adjacent 20-30 nm lateral length scale. Since the well thickness fluctuation is insufficient to reproduce SS or E0, effective bandgap inhomogeneity is attributed to be due to large bandgap bowing in InGaN. The spontaneous emission was thus assigned as being due to the recombination of QW excitons weakly localized in exponential tail-type potential minima in the QW. The size of localization is smaller than the quantum-disk [M. Sugawara, Phys. Rev. B 51, 10743 (1995)]-size. Such small bandgap inhomogeneity can be leveled by injecting high density carriers under lasing conditions, which can explain the general experimental finding that the quantum efficiency decreases with increasing carrier density in InGaN QW devices due to free carrier trapping into threading dislocations.

Towards highly efficient photoanodes: the role of carrier dynamics on the photoelectrochemical performance of InGaN/GaN multiple quantum well coaxial nanowires

RSC Advances ◽  
2015 ◽  
Vol 5 (30) ◽  
pp. 23303-23310 ◽  
Author(s):  
Mohamed Ebaid ◽  
Jin-Ho Kang ◽  
Seung-Hyuk Lim ◽  
Yong-Hoon Cho ◽  
Sang-Wan Ryu
Keyword(s):  
Quantum Well ◽  
Water Splitting ◽  
Conversion Efficiency ◽  
Multiple Quantum Well ◽  
Carrier Dynamics ◽  
Multiple Quantum ◽  
Photoelectrochemical Performance ◽  
Highly Active ◽  
Electron Conversion

The carrier dynamics in highly active InGaN/GaN coaxial nanowire photoanodes were studied for photoelectrochemical water splitting applications that can provide deeper insight to enhance the photon-to-electron conversion efficiency.

Radiative recombination processes in Al0.07Ga0.93N/GaN multiple quantum well structures, role of hole localisation

2004 ◽  
Vol 1 (10) ◽  
pp. 2500-2503 ◽  
Author(s):  
B. Monemar ◽  
H. Haratizadeh ◽  
P. P. Paskov ◽  
J. P. Bergman ◽  
E. Valcheva ◽  
...  
Keyword(s):  
Quantum Well ◽  
Radiative Recombination ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Recombination Processes
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