Numerical simulation of flared planar semiconductor optical amplifier taking into account thermal effects

1998 ◽  
Author(s):  
Alexander S. Logginov ◽  
Nikolai N. Marjin ◽  
Alexei G. Rzhanov
Keyword(s):  
Numerical Simulation ◽  
Semiconductor Optical Amplifier ◽  
Thermal Effects ◽  
Optical Amplifier

Numerical simulation on pulsed operation of an all-semiconductor optical amplifier nonlinear loop device

2001 ◽  
Vol 19 (11) ◽  
pp. 1768-1776 ◽  
Author(s):  
Jyh-Yang Wang ◽  
Jiun-Haw Lee ◽  
Yean-Woei Kiang ◽  
Chih-Chung Yang
Keyword(s):  
Numerical Simulation ◽  
Semiconductor Optical Amplifier ◽  
Optical Amplifier

Numerical simulation of slow light in the semiconductor optical amplifier

2010 ◽  
Author(s):  
Zhaoying Wang ◽  
Miaomiao Hu ◽  
Dongfang Jia ◽  
Tianxin Yang
Keyword(s):  
Numerical Simulation ◽  
Semiconductor Optical Amplifier ◽  
Slow Light ◽  
Optical Amplifier

Numerical simulation of passively mode-locked fiber laser based on semiconductor optical amplifier

2013 ◽  
Author(s):  
Jingwen Yang ◽  
Dongfang Jia ◽  
Zhongyuan Zhang ◽  
Jiong Chen ◽  
Tonghui Liu ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Fiber Laser ◽  
Semiconductor Optical Amplifier ◽  
Optical Amplifier

Contacting Diffusion with FIB for Backside Circuit Edit—Procedures and Material Analysis

2005 ◽  
Author(s):  
U. Kerst ◽  
P. Sadewater ◽  
R. Schlangen ◽  
C. Boit ◽  
R. Leihkauf ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Electrical Properties ◽  
Process Parameters ◽  
Thermal Effects ◽  
Silicon Surface ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Schottky Barriers ◽  
Material Analysis ◽  
Type Silicon

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.

Frequency Encoded All Optical Tri-state Logic Gates NOT and NAND Using Semiconductor Optical Amplifier Based Interferometric Switches

2020 ◽  
Vol 10 (4) ◽  
pp. 369-380
Author(s):  
K. Maji ◽  
K. Mukherjee ◽  
A. Raja
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Extinction Ratio ◽  
Optical Power ◽  
Logic Gates ◽  
Optical Amplifier ◽  
All Optical ◽  
State Frequency ◽  
Spontaneous Noise ◽  
First Time ◽  
Practical Feasibility

All optical tri-state frequency encoded logic gates NOT and NAND are proposed and numerically investigated using TOAD based interferometric switch for the first time to the best of our knowledge. The optical power spectrum, extinction ratio, contrast ration, and amplified spontaneous noise are calculated to analyze and confirm practical feasibility of the gates. The proposed device works for low switching energy and has high contrast and extinction ratio as indicated in this work.

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