Numerical simulation of semiconductor optical amplifier assisted Sagnac gate and investigation of its switching characteristics

2004 ◽  
Vol 43 (7) ◽  
pp. 1622 ◽  
Author(s):  
Kyriakos E. Zoiros
Keyword(s):  
Numerical Simulation ◽  
Semiconductor Optical Amplifier ◽  
Optical Amplifier ◽  
Switching Characteristics

Numerical simulation on pulsed operation of an all-semiconductor optical amplifier nonlinear loop device

2001 ◽  
Vol 19 (11) ◽  
pp. 1768-1776 ◽  
Author(s):  
Jyh-Yang Wang ◽  
Jiun-Haw Lee ◽  
Yean-Woei Kiang ◽  
Chih-Chung Yang
Keyword(s):  
Numerical Simulation ◽  
Semiconductor Optical Amplifier ◽  
Optical Amplifier

Numerical simulation of slow light in the semiconductor optical amplifier

2010 ◽  
Author(s):  
Zhaoying Wang ◽  
Miaomiao Hu ◽  
Dongfang Jia ◽  
Tianxin Yang
Keyword(s):  
Numerical Simulation ◽  
Semiconductor Optical Amplifier ◽  
Slow Light ◽  
Optical Amplifier

Numerical simulation of passively mode-locked fiber laser based on semiconductor optical amplifier

2013 ◽  
Author(s):  
Jingwen Yang ◽  
Dongfang Jia ◽  
Zhongyuan Zhang ◽  
Jiong Chen ◽  
Tonghui Liu ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Fiber Laser ◽  
Semiconductor Optical Amplifier ◽  
Optical Amplifier

Frequency Encoded All Optical Tri-state Logic Gates NOT and NAND Using Semiconductor Optical Amplifier Based Interferometric Switches

2020 ◽  
Vol 10 (4) ◽  
pp. 369-380
Author(s):  
K. Maji ◽  
K. Mukherjee ◽  
A. Raja
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Extinction Ratio ◽  
Optical Power ◽  
Logic Gates ◽  
Optical Amplifier ◽  
All Optical ◽  
State Frequency ◽  
Spontaneous Noise ◽  
First Time ◽  
Practical Feasibility

All optical tri-state frequency encoded logic gates NOT and NAND are proposed and numerically investigated using TOAD based interferometric switch for the first time to the best of our knowledge. The optical power spectrum, extinction ratio, contrast ration, and amplified spontaneous noise are calculated to analyze and confirm practical feasibility of the gates. The proposed device works for low switching energy and has high contrast and extinction ratio as indicated in this work.

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