Development of the nitride film thickness standard (NFTS)

1998 ◽  
Author(s):  
Prabha Durga Pal
Keyword(s):  
Film Thickness ◽  
Nitride Film ◽  
Thickness Standard

Residual Stress Measurement in Silicon Substrate After Local Thermal Oxidation Using Microscopic Raman Spectroscopy

1991 ◽  
Vol 226 ◽  
Author(s):  
Hideo Miura ◽  
Hiroshi Sakata ◽  
Shinji Sakata Merl
Keyword(s):  
Residual Stress ◽  
Raman Spectroscopy ◽  
Tensile Stress ◽  
Oxide Film ◽  
Film Thickness ◽  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Silicon Substrate ◽  
Nitride Film ◽  
Oxide Film Thickness

AbstractThe residual stress in silicon substrates after local thermal oxidation is discussed experimentally using microscopic Raman spectroscopy. The stress distribution in the silicon substrate is determined by three main factors: volume expansion of newly grown silicon–dioxide, deflection of the silicon–nitride film used as an oxidation barrier, and mismatch in thermal expansion coefficients between silicon and silicon dioxide.Tensile stress increases with the increase of oxide film thickness near the surface of the silicon substrate under the oxide film without nitride film on it. The tensile stress is sometimes more than 100 MPa. On the other hand, a complicated stress change is observed near the surface of the silicon substrate under the nitride film. The tensile stress increases initially, as it does in the area without nitride film on it. However, it decreases with the increase of oxide film thickness, then the compressive stress increases in the area up to 170 MPa. This stress change is explained by considering the drastic structural change of the oxide film under the nitride film edge during oxidation.

Metal Film Thickness Standards

1995 ◽  
Vol 39 ◽  
pp. 707-712
Author(s):  
Craig D. England ◽  
Laurie Bechder ◽  
Steve Zierer ◽  
Lisa Gassaway ◽  
Barbara Miner ◽  
...  
Keyword(s):  
Film Thickness ◽  
Titanium Nitride ◽  
Metal Film ◽  
Optical Constants ◽  
Nitride Film ◽  
Cross Sectional ◽  
X Ray ◽  
Cobalt Film ◽  
Transmission Electron ◽  
Titanium Nitride Film

Cobalt, titanium and titanium nitride film thickness standards were deposited. All metal film thicknesses were obtained from x-ray reflectivity (XRR) measurement using a conventional powder diffractometer. The cobalt film thicknesses were also thicknesses were also determined from cross-sectional transmission electron microscopy (TEM) images and scanning electron microscope energy dispersive x-ray spectroscopy (SEM/EDXS) data using the recently developed MUFILM measurement technique. The cobalt film thicknesses obtained using MUFILM agreed well with the XRR results. The metal film standards were used to obtain calibration curves for an in-fab XRF system. The cobalt and titanium nitride film thickness standards were also used to adjust the optical constants used for an in-fab ellipsometer.

Thin Ti/TiN Barriers for Ulsi Application

1995 ◽  
Vol 403 ◽  
Author(s):  
C. K. Huang ◽  
Shi-Qing Wang
Keyword(s):  
Film Thickness ◽  
Physical Vapor Deposition ◽  
Nitride Film ◽  
Film Properties ◽  
Reduced Dimensions ◽  
Aspect Ratios ◽  
Grain Structures ◽  
Diffusion Barrier Layer ◽  
Electrical Resistivities ◽  
Titanium Nitride Film

AbstractIn advanced ULSI devices, Ti (titanium)/TiN (titanium nitride) film stack is commonly used as liner materials. Ti is used to reduce contact/via resistance while TiN is utilized as an adhesion/diffusion barrier layer. Ti/TiN liner with optimized thickness combinations should be used for progressively advanced ULSI devices with features of reduced dimensions and increased aspect ratios in order to effectively reduce contact/via resistance, ensure barrier quality, and maximize cross section of metal conductors with low electrical resistivities. This study evaluates the film properties such as sheet resistance, density, stress, grain structures, and reflectance of individual Ti and TiN, and composite Ti/TiN films manufactured by collimated physical vapor deposition (PVD). The film thickness ranges from 5 to 60nm. The dependence of these properties on the film thickness will be discussed.

scholarly journals Measurement of the Beruforge 152DL thin-film lubricant using a developed thin-film thickness standard

2020 ◽  
Vol 9 (1) ◽  
pp. 157-165 ◽  
Author(s):  
Sebastian Metzner ◽  
Tamara Reuter ◽  
Tino Hausotte
Keyword(s):  
Thin Film ◽  
Refractive Index ◽  
Film Thickness ◽  
Optical Measurement ◽  
Measurement Techniques ◽  
Forming Process ◽  
Thin Film Thickness ◽  
Temperature Changes ◽  
Thickness Standard ◽  
Continuous Measuring

Abstract. Systematic deviations due to remaining lubricant on the workpiece have a significant influence on the measurement of sheet-bulk metal formed parts. The expected layer thickness for the workpieces after the forming process is less than 35 µm. For the determination of the refractive index of the lubricant and thus the effects of the lubricant on optical measurement techniques, a lubricant thin-film thickness standard was developed which represents a continuous measuring range from 6 to 100 µm. To determine the refractive index, the thin-film thickness standard was measured with a coaxial interferometric measurement system in various thickness ranges. Due to the knowledge of the optical and the geometrical path length, the refractive index can then be determined approximately. In addition, an XY stage was used to scan the entire thin-film area of the standard. The measurement setup in a temperature box allows for determining the effects of temperature changes on the optical properties of the lubricant.

Surface Films on Zircaloy-2 Samples Cracked in Neutral Aqueous NaCl by Stress Corrosion

1973 ◽  
Vol 31 ◽  
pp. 46-47
Author(s):  
R.A. Ploc
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Stress Corrosion ◽  
Zirconium Dioxide ◽  
Surface Film ◽  
Surface Films ◽  
Continuous Layer ◽  
Transmission Electron ◽  
Product Film

Samples of low-nickel Zircaloy-2 (material MLI-788-see(1)), when anodically polarized in neutral 5 wt% NaCl solutions, were found to be susceptible to pitting and stress corrosion cracking. The SEM revealed that pitting of stressed samples was occurring below a 2000Å thick surface film which behaved differently from normal zirconium dioxide in that it did not display interference colours. Since the initial film thickness was approximately 65Å, attempts were made to examine the product film by transmission electron microscopy to deduce composition and how the corrosion environment could penetrate the continuous layer.

(111) Monocrystalline Nickel Films

1972 ◽  
Vol 30 ◽  
pp. 512-513
Author(s):  
T.E. Pratt ◽  
R.W. Vook
Keyword(s):  
Film Thickness ◽  
Deposition Rate ◽  
Room Temperature ◽  
Narrow Range ◽  
High Vacuum ◽  
Residual Pressure ◽  
Temperature Dependent ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Substrate Temperatures

(111) oriented thin monocrystalline Ni films have been prepared by vacuum evaporation and examined by transmission electron microscopy and electron diffraction. In high vacuum, at room temperature, a layer of NaCl was first evaporated onto a freshly air-cleaved muscovite substrate clamped to a copper block with attached heater and thermocouple. Then, at various substrate temperatures, with other parameters held within a narrow range, Ni was evaporated from a tungsten filament. It had been shown previously that similar procedures would yield monocrystalline films of CU, Ag, and Au.For the films examined with respect to temperature dependent effects, typical deposition parameters were: Ni film thickness, 500-800 A; Ni deposition rate, 10 A/sec.; residual pressure, 10-6 torr; NaCl film thickness, 250 A; and NaCl deposition rate, 10 A/sec. Some additional evaporations involved higher deposition rates and lower film thicknesses.Monocrystalline films were obtained with substrate temperatures above 500° C. Below 450° C, the films were polycrystalline with a strong (111) preferred orientation.

The method of replication affects metal film granularity and resolution

1989 ◽  
Vol 47 ◽  
pp. 708-709
Author(s):  
George C. Ruben
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Film Thickness ◽  
Single Molecule ◽  
Metal Film ◽  
Vertical Surface ◽  
High Resolution Imaging ◽  
Controllable Factors ◽  
Resolution Imaging

Single molecule resolution in electron beam sensitive, uncoated, noncrystalline materials has been impossible except in thin Pt-C replicas ≤ 150Å) which are resistant to the electron beam destruction. Previously the granularity of metal film replicas limited their resolution to ≥ 20Å. This paper demonstrates that Pt-C film granularity and resolution are a function of the method of replication and other controllable factors. Low angle 20° rotary , 45° unidirectional and vertical 9.7±1 Å Pt-C films deposited on mica under the same conditions were compared in Fig. 1. Vertical replication had a 5A granularity (Fig. 1c), the highest resolution (table), and coated the whole surface. 45° replication had a 9Å granulartiy (Fig. 1b), a slightly poorer resolution (table) and did not coat the whole surface. 20° rotary replication was unsuitable for high resolution imaging with 20-25Å granularity (Fig. 1a) and resolution 2-3 times poorer (table). Resolution is defined here as the greatest distance for which the metal coat on two opposing faces just grow together, that is, two times the apparent film thickness on a single vertical surface.

FILM THICKNESS DEPENDENCE OF HEAT TRANSMISSION INTO HELIUM

1981 ◽  
Vol 42 (C6) ◽  
pp. C6-825-C6-827
Author(s):  
P. Taborek ◽  
M. Sinvani ◽  
M. Weimer ◽  
D. Goodstein
Keyword(s):  
Film Thickness ◽  
Thickness Dependence ◽  
Heat Transmission
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