Optical studies of the internal electric field distributions, crystal defects, and detector performance of CdZnTe radiation detectors

Author(s):  
H. Walter Yao ◽  
Ralph B. James ◽  
Edwin Y. Lee ◽  
Richard W. Olsen ◽  
Haim Hermon ◽  
...  
1997 ◽  
Vol 487 ◽  
Author(s):  
H. W. Yao ◽  
R. J. Anderson ◽  
R. B. James ◽  
R. W. Olsen

AbstractThe internal electric field distributions of the CdZnTe (CZT) detectors under bias were characterized by optical polarized transmission at a 952 nm illumination utilizing the Pockels electro-optic effect. Two-dimensional (2D) images mapping the internal electrical field intensity changes were obtained to study the performance of CZT room-temperature radiation detectors. Planar and a P-I-N structured CZT detectors were investigated under different operating bias voltages. Analysis of optical profiles from a planar single crystal detector provides a quantitative nondestructive description of the electric field or voltage distributions inside a radiation detector. The P-I-N structured CZT detector showed a nearly uniform electric field in a width which varied with the operating bias voltage. An energyband model of a semiconductor junction with a depletion layer was employed to understand the results.


2011 ◽  
Vol 58 (4) ◽  
pp. 1949-1952 ◽  
Author(s):  
Utpal Narayan Roy ◽  
Stephen Weiler ◽  
Juergen Stein ◽  
Michael Groza ◽  
Vladimir Buliga ◽  
...  

2017 ◽  
Vol 17 (13) ◽  
pp. 4115-4121 ◽  
Author(s):  
Qiao Tan ◽  
Qifeng Xu ◽  
Linyang Chen ◽  
Yifan Huang

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