Infra-red microscopy of Cd(Zn)Te radiation detectors revealing their internal electric field structure under bias

1996 ◽  
Vol 43 (3) ◽  
pp. 1487-1490 ◽  
Author(s):  
P. De Antonis ◽  
E.J. Morton ◽  
F.J.W. Podd
Keyword(s):  
Electric Field ◽  
Radiation Detectors ◽  
Field Structure ◽  
Internal Electric Field ◽  
Infra Red

Internal Electric Field Structure of Launched Fast Magnetosonic Waves in the DIII-D Tokamak

1998 ◽  
Vol 80 (11) ◽  
pp. 2330-2333 ◽  
Author(s):  
J. H. Lee ◽  
W. A. Peebles ◽  
E. F. Jaeger ◽  
E. J. Doyle ◽  
N. C. Luhmann ◽  
...  
Keyword(s):  
Electric Field ◽  
Field Structure ◽  
Internal Electric Field

Optical Studies of the Internal Electric Field Distributions of CdZnTe Detectors Under Bias Conditions

1997 ◽  
Vol 487 ◽  
Author(s):  
H. W. Yao ◽  
R. J. Anderson ◽  
R. B. James ◽  
R. W. Olsen
Keyword(s):  
Electric Field ◽  
Radiation Detector ◽  
Radiation Detectors ◽  
Uniform Electric Field ◽  
Internal Electric Field ◽  
Field Distributions ◽  
Intensity Changes ◽  
Temperature Radiation ◽  
Cdznte Detectors ◽  
Czt Detectors

AbstractThe internal electric field distributions of the CdZnTe (CZT) detectors under bias were characterized by optical polarized transmission at a 952 nm illumination utilizing the Pockels electro-optic effect. Two-dimensional (2D) images mapping the internal electrical field intensity changes were obtained to study the performance of CZT room-temperature radiation detectors. Planar and a P-I-N structured CZT detectors were investigated under different operating bias voltages. Analysis of optical profiles from a planar single crystal detector provides a quantitative nondestructive description of the electric field or voltage distributions inside a radiation detector. The P-I-N structured CZT detector showed a nearly uniform electric field in a width which varied with the operating bias voltage. An energyband model of a semiconductor junction with a depletion layer was employed to understand the results.

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