Theoretical model for the reactive pulsed deposition process: application to the case of ablation of a Ti target in low-pressure N 2
Keyword(s):
Growth rate and deposition process of silicon carbide film by low-pressure chemical vapor deposition
1996 ◽
Vol 169
(3)
◽
pp. 485-490
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1995 ◽
Vol 34
(Part 1, No. 6A)
◽
pp. 3216-3226
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2002 ◽
Vol 45
(20)
◽
pp. 4151-4161
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