Synthesis of high-quality Si1-yCy and Si1-x-yGexCy epitaxial layers on (100) Si by ion implantation and pulsed excimer laser crystallization

1998 ◽  
Author(s):  
Jean-Jacques Grob ◽  
Eric Fogarassy ◽  
Adriana Grob ◽  
Dominique Muller ◽  
Bernard Prevot ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Excimer Laser ◽  
Epitaxial Layers ◽  
Laser Crystallization ◽  
High Quality ◽  
Excimer Laser Crystallization

High-Performance Recessed-Channel Germanium Thin-Film Transistors via Excimer Laser Crystallization

2018 ◽  
Vol 39 (3) ◽  
pp. 367-370 ◽  
Author(s):  
Chan-Yu Liao ◽  
Shih-Hung Chen ◽  
Wen-Hsien Huang ◽  
Chang-Hong Shen ◽  
Jia-Min Shieh ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
High Performance ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization ◽  
Recessed Channel

A Projection-Type Excimer-Laser Crystallization System For Ultra-Large Grain Growth Of Si Thin-Films

1999 ◽  
Vol 558 ◽  
Author(s):  
Chang-Ho Oh ◽  
Mitsuru Nakata ◽  
Masakiyo Matsumura
Keyword(s):  
Thin Films ◽  
Phase Shift ◽  
Excimer Laser ◽  
Laser Crystallization ◽  
Optical Lens ◽  
System A ◽  
Optical Projection ◽  
Crystallization System ◽  
Excimer Laser Crystallization ◽  
Phase Shift Mask

ABSTRACTWe have proposed a new excimer-laser crystallization system based on an optical projection concept. In the proposed system, a collimated excimer-laser light pulse is irradiated to Si thin-films on a glassy substrate, through a phase-shift mask and an optical lens system. Using oneand two-dimensional phase-shift masks, we have examined feasibility of the proposed method.

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