Large format CID x-ray image sensors

Author(s):  
Joseph Carbone ◽  
Zulfiquar Alam ◽  
Claudia Borman ◽  
Steven Czebiniak ◽  
H. Ziegler
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2012 ◽  
Author(s):  
Xinqiao (Chiao) Liu ◽  
Boyd Fowler ◽  
Hung Do ◽  
Mark Jaffe ◽  
Richard Rassel ◽  
...  

2004 ◽  
Author(s):  
John A. Oertel ◽  
Tom Archuleta ◽  
Mike S. Bakeman ◽  
Phillip Sanchez ◽  
George Sandoval ◽  
...  
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X Ray ◽  

2008 ◽  
Vol 151 (1-2) ◽  
pp. 418-423 ◽  
Author(s):  
Samuel J. Moseley ◽  
Christine A. Allen ◽  
Nicholas Costin ◽  
Richard Kelley ◽  
Caroline Kilbourne ◽  
...  
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2020 ◽  
Vol 897 (1) ◽  
pp. 92 ◽  
Author(s):  
Casey T. DeRoo ◽  
Randall L. McEntaffer ◽  
Benjamin D. Donovan ◽  
Fabien Grisé ◽  
Chad Eichfeld ◽  
...  

2012 ◽  
Vol 24 (10) ◽  
pp. 2386-2390
Author(s):  
宗方轲 Zong Fangke ◽  
杨勤劳 Yang Qinlao ◽  
顾礼 Gu Li ◽  
李翔 Li Xiang ◽  
张敬金 Zhang Jingjin
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Sensors ◽  
2019 ◽  
Vol 19 (24) ◽  
pp. 5447
Author(s):  
Calvin Yi-Ping Chao ◽  
Shang-Fu Yeh ◽  
Meng-Hsu Wu ◽  
Kuo-Yu Chou ◽  
Honyih Tu ◽  
...  

In this paper we present a systematic approach to sort out different types of random telegraph noises (RTN) in CMOS image sensors (CIS) by examining their dependencies on the transfer gate off-voltage, the reset gate off-voltage, the photodiode integration time, and the sense node charge retention time. Besides the well-known source follower RTN, we have identified the RTN caused by varying photodiode dark current, transfer-gate and reset-gate induced sense node leakage. These four types of RTN and the dark signal shot noises dominate the noise distribution tails of CIS and non-CIS chips under test, either with or without X-ray irradiation. The effect of correlated multiple sampling (CMS) on noise reduction is studied and a theoretical model is developed to account for the measurement results.


1987 ◽  
Vol 26 (9) ◽  
Author(s):  
Morley M. Blouke ◽  
B. Corrie ◽  
Denis L. Heidtmann ◽  
F. H. Yang ◽  
M. Winzenread ◽  
...  

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