Amorphous semiconductor photoreceptors and X-ray image sensors

Author(s):  
S. Vaezi-Nejad
Sensors ◽  
2019 ◽  
Vol 19 (24) ◽  
pp. 5447
Author(s):  
Calvin Yi-Ping Chao ◽  
Shang-Fu Yeh ◽  
Meng-Hsu Wu ◽  
Kuo-Yu Chou ◽  
Honyih Tu ◽  
...  

In this paper we present a systematic approach to sort out different types of random telegraph noises (RTN) in CMOS image sensors (CIS) by examining their dependencies on the transfer gate off-voltage, the reset gate off-voltage, the photodiode integration time, and the sense node charge retention time. Besides the well-known source follower RTN, we have identified the RTN caused by varying photodiode dark current, transfer-gate and reset-gate induced sense node leakage. These four types of RTN and the dark signal shot noises dominate the noise distribution tails of CIS and non-CIS chips under test, either with or without X-ray irradiation. The effect of correlated multiple sampling (CMS) on noise reduction is studied and a theoretical model is developed to account for the measurement results.


1998 ◽  
Vol 526 ◽  
Author(s):  
Z.M. Ren ◽  
Y.F. Lu ◽  
W.D. Song ◽  
D.S.H. Chan ◽  
T.S. Low ◽  
...  

AbstractCarbon nitride thin films were deposited on silicon wafers by pulsed KrF excimer laser (wavelength 248 nm, duration 23 ns) ablation of graphite in nitrogen atmosphere. Different fluences of the excimer laser and pressures of the nitrogen atmosphere were used in order to achieve a high nitrogen content in the deposited thin films. Fourier Transform Infra-red (FTIR) and X-ray photoelectron spectroscopy (XPS) were used to identify the binding structure and the content of the nitrogen species in the deposited thin films. The highest N/C ratio 0.42 was achieved at an excimer laser fluence of 0.8 Jcm -2with a repetition rate of 10 Hz under the nitrogen pressure of PN=100 mTorr. A high content of C=N double bond instead of C-N triple bond was indicated in the deposited thin films. Ellipsometry was used to analyze the optical properties of the deposited thin films. The carbon nitride thin films have amorphous-semiconductor-like characteristics with the optical band gap Eop, as high as 0.42 eV.


2002 ◽  
Author(s):  
Robert A. Street ◽  
Steve E. Ready ◽  
Leonid Melekhov ◽  
Jackson Ho ◽  
Asaf Zuck ◽  
...  
Keyword(s):  

1989 ◽  
Vol 160 ◽  
Author(s):  
David D. Allred ◽  
Qi Wang ◽  
Jesus Gonzalez-Hernandez

AbstractLaser Raman spectroscopy has been found to be useful for characterizing amorphous semiconductor multilayers, especially the interfaces of multilayers. Recently, we have extended this technique to the characterization of magnetron sputtered multilayers commonly used as reflectors in soft x-ray optics. Unlike the multilayers previously studied which contained only semiconductors and dielectrics, these are generally semiconductor/metal multilayers. We report here on the Raman characterization of the most common class of multilayers used in soft x-ray optics, those that contain a high density metal like tungsten interspersed with layers of carbon. In all of the metal/carbon multilayers the dominate feature in the Raman spectra is due to a-C. The a-C spectra consists of a broad peak at about 1560 cm-1 (G-peak) and a shoulder at about 1400 cm-1 (D-peak). This can be deconvoluted with Gaussian line shapes to yield two peaks (one at about 1560 to 1570 cm-1 and the other at about 1380 to 1420 cm-1). Among the W/C multilayer samples peak positions and relative magnitudes changed little with carbon thickness over the range of 1 to 12 nm. Significant differences are, however, seen as the identity of the metal component is altered or, especially, as the preparations are varied. For example, the intensity ratio of the D-peak to G-peak was much larger for multilayer samples prepared under conditions of good plasma confinement.


2001 ◽  
Vol 378-381 ◽  
pp. 394-401
Author(s):  
Á. Bordás ◽  
M. Vučinić ◽  
A. Kapor ◽  
B. Antić

Sign in / Sign up

Export Citation Format

Share Document