1.55-μm laser diodes with leaky waveguide structure

1997 ◽  
Author(s):  
Jingchang Zhong ◽  
Yingjie Zhao ◽  
Ronghui Li
Keyword(s):  
Laser Diodes ◽  
Waveguide Structure ◽  
Leaky Waveguide

High power single mode operation of AlGaInP visible laser diode with lateral leaky waveguide structure

1994 ◽  
Vol 6 (6) ◽  
pp. 684-686
Author(s):  
I. Kidoguchi ◽  
S. Karniyama ◽  
H. Adachi ◽  
M. Mannoh ◽  
Y. Ban ◽  
...  
Keyword(s):  
Laser Diode ◽  
High Power ◽  
Single Mode ◽  
Waveguide Structure ◽  
Single Mode Operation ◽  
Mode Operation ◽  
Visible Laser ◽  
Leaky Waveguide

Green laser diodes with channelled-substrate planar waveguide structure

1995 ◽  
Vol 31 (19) ◽  
pp. 1667-1668 ◽  
Author(s):  
T. Kawasumi ◽  
Y. Mori ◽  
A. Ishibashi ◽  
N. Nakayama
Keyword(s):  
Planar Waveguide ◽  
Laser Diodes ◽  
Green Laser ◽  
Waveguide Structure

INFLUENCE OF WAVEGUIDE LAYERS ON DEEP VIOLET InGaN DQW LASERS PERFORMANCE

2015 ◽  
Vol 22 (04) ◽  
pp. 1550051
Author(s):  
GH. ALAHYARIZADEH ◽  
M. AMIRHOSEINY ◽  
Z. HASSAN
Keyword(s):  
Slope Efficiency ◽  
Light Emission ◽  
Diode Lasers ◽  
Laser Diodes ◽  
Threshold Current ◽  
Waveguide Structure ◽  
Optical And Electrical Properties ◽  
Optical Intensity ◽  
Optical Confinement ◽  
Current Output

This paper focuses on the performance characteristics of laser diodes (LDs) to improve output light emission properties. The optical and electrical properties such as threshold current, output power, slope efficiency, differential quantum efficiency, optical intensity and optical confinement factor has been compared for diode lasers with different waveguide structures. The waveguide structures which were analyzed in this research were a basic GaN waveguide structure, an InGaN waveguide structure, and AlInGaN waveguide structure. In addition the effects of Indium concentration and the thickness of the top and down waveguide layers have been studied. The InGaN waveguide layer, which has a higher concentration of Indium, appears to increase the OCF. The increased thickness of the GaN layer improves light emission. However, laser performance deteriorates with increasing thickness of waveguide layers more than 100 nm. Over all, LD with AlInGaN waveguide structure has highest OCF, slope efficiency and DQE.

Optical-Mode Study of Galium Nitrate Based Laser Diodes

2012 ◽  
Vol 571 ◽  
pp. 476-481
Author(s):  
Douglas Alan Cattarusa ◽  
Xiao Min Jin ◽  
Xing Xing Fu ◽  
Xiang Ning Kang ◽  
Bei Zhang ◽  
...  
Keyword(s):  
Lower Order ◽  
Light Emission ◽  
Laser Diodes ◽  
Waveguide Structure ◽  
Waveguide Layer ◽  
Mode Analysis ◽  
Ingan Layer ◽  
Optical Confinement ◽  
Optical Mode ◽  
First Order

This paper focuses on the optical mode analysis of laser diodes to improve light emission. Under the mode analysis, we compare the optical confinement factor (OCF) percentage of the emitting light from the LDs. There are two structures which we analyze: a basic GaN waveguide structure and an InGaN waveguide structure. The second structure has additional InGaN waveguides and is analyzed under two additional design variations: the concentration of Indium and the thickness of the top waveguide layer. The results of this study indicate introducing InGaN waveguide layers correlates with lower order modes (zero and first order) and increase the OCF values. The top InGaN waveguide layer, which has a higher concentration of Indium, appears to increase the OCF. However, the increased thickness of the InGaN layer causes the lower modes’ OFC to decrease. Over all, in the best case, InGaN LD has an OCF of 1.8896%, which is about a 312% improvement compared to that of GaN LD ( OCF=0.4535%).

Metal-clad ridge waveguide structure InGaP/InGaAIP visible laser diodes

1995 ◽  
Vol 27 (5) ◽  
pp. 453-457
Author(s):  
T. Kim ◽  
M. S. Oh ◽  
D. H. Shin ◽  
J. W. Lee ◽  
J. Y. Kim
Keyword(s):  
Laser Diodes ◽  
Ridge Waveguide ◽  
Waveguide Structure ◽  
Visible Laser ◽  
Ridge Waveguide Structure

Room-temperature continuous-wave operation of InGaN multiple-quantum-well laser diodes with an asymmetric waveguide structure

1999 ◽  
Vol 75 (4) ◽  
pp. 581-583 ◽  
Author(s):  
Michael Kneissl ◽  
David P. Bour ◽  
Chris G. Van de Walle ◽  
Linda T. Romano ◽  
John E. Northrup ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Continuous Wave ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Waveguide Structure ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Continuous Wave Operation ◽  
Multiple Quantum Well Laser

The Characteristics of Facet Coatings on Diode Lasers

2015 ◽  
Vol 1089 ◽  
pp. 202-205
Author(s):  
Zai Jin Li ◽  
Yi Qu ◽  
Te Li ◽  
Peng Lu ◽  
Bao Xue Bo ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Output Power ◽  
Laser Diode ◽  
Diode Lasers ◽  
Laser Diodes ◽  
Waveguide Structure ◽  
Test Results ◽  
Passivation Film ◽  
Graded Index ◽  
Is Failure

The effect of the output power with different facet passivation methods on 980 nm graded index waveguide structure InGaAs/AlGaAs laser diodes was studied. The output power of the 980 nm laser diodes with Si passivation, and ZnSe passivation at the front and the back facet were compared. The test results show that output power of the ZnSe passivation method is 11% higher than Si passivation method. The laser diode with the Si passivation film is failure when current is 5.1 A, the laser diode with the ZnSe passivation film is not failure until current is 5.6 A And we analyzed the failure reasons for each method. In conclusion, the method of coated ZnSe passivation on the laser diode facet can effectively increase the output power of semiconductor lasers.

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