Mechanical properties of dielectric thin films

1997 ◽  
Author(s):  
Herve Rigneault ◽  
Christine Mahodaux ◽  
Hugues Giovannini ◽  
Ludovic Escoubas ◽  
Paul Moretti
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Dielectric Thin Films

scholarly journals Mechanical Properties of Optical Dielectric Thin Films Deposited by the Ion Plating Technique

1997 ◽  
Vol 8 (4-5) ◽  
pp. 251-260 ◽  
Author(s):  
Christine Mahodaux ◽  
Hervé Rigneault ◽  
Hugues Giovannini ◽  
Ludovic Escoubas ◽  
Paul Morreti
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Dielectric Thin Films ◽  
Ion Plating ◽  
Plating Technique ◽  
Optical Dielectric

scholarly journals Nanoindentation of Silicate Low-K Dielectric Thin Films

2002 ◽  
Vol 716 ◽  
Author(s):  
Joseph B. Vella ◽  
Alex A. Volinsky ◽  
Indira S. Adhihetty ◽  
N.V. Edwards ◽  
William W. Gerberich
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Dielectric Constant ◽  
Elastic Modulus ◽  
Percolation Theory ◽  
Scratch Testing ◽  
Dielectric Thin Films ◽  
Cube Corner ◽  
Low K

AbstractThe capabilities of nanoindentation to characterize low-k organo silicate glass (OSG) thin films is explored as a relatively rapid and inexpensive metric of mechanical properties, adhesion strength, and fracture toughness. One method of decreasing the static dielectric constant of OSG interlayer dielectrics requires the introduction of porosity in the material which has a dramatic impact on its mechanical and toughness properties. Percolation theory is used to formulate a correlation between porosity and elastic modulus. Using cube corner diamond indentation and scratch testing fracture toughness calculations are also discussed.

Mechanical properties of PVD Al1−xCrxN thin films

2011 ◽  
Vol 99 (2) ◽  
pp. 239-244 ◽  
Author(s):  
T.T.H. Pham ◽  
E. Le Bourhis ◽  
P. Goudeau ◽  
P. Guérin
Keyword(s):  
Thin Films ◽  
Mechanical Properties

Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang
Keyword(s):  
Thin Films ◽  
Dielectric Film ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Fem Modeling ◽  
Dielectric Thin Films ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

Sign in / Sign up

Export Citation Format

Share Document