Focal plane arrays based on HgCdTe epitaxial layers MBE-grown on GaAs substrates

1997 ◽  
Author(s):  
Vladimir V. Vasilyev ◽  
Dmitrii G. Esaev ◽  
Anatoly G. Klimenko ◽  
A. I. Kozlov ◽  
Alexander I. Krymsky ◽  
...  
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays ◽  
Epitaxial Layers ◽  
Gaas Substrates

InSb Detectors and Focal Plane Arrays on GaAs, Si, and Al203 Substrates

1996 ◽  
Vol 450 ◽  
Author(s):  
E. Michel ◽  
H. Mohseni ◽  
J. Wojkowski ◽  
J. Sandven ◽  
J. Xu ◽  
...  
Keyword(s):  
Thermal Imaging ◽  
Focal Plane ◽  
Growth Conditions ◽  
Substrate Material ◽  
Focal Plane Arrays ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Si Substrates ◽  
Sapphire Substrates ◽  
Gaas Substrates

ABSTRACTIn this paper, we report on the growth and fabrication of InSb detectors and Focal Plane Arrays (FPA's) on (100) Si, Al203, and (100) and (111) GaAs substrates for infrared (IR) imaging. Several advantages result from using GaAs, Si, or Al203. First, InSb FPA's on these materials do not require thinning as with detectors fabricated from bulk InSb. In addition, these substrates are available in larger sizes, are semi-insulating (GaAs and sapphire), and are less expensive than InSb.Optimum growth conditions have been determined and discrete devices have been fabricated on each substrate material. The structural, electrical, and optical properties were verified using x-ray, Hall, photoresponse, and photoluminescence (PL) measurements. Measured x-ray Full Widths at Half Maximum (FWHM) were as low as 55 and 100 arcsec for InSb epilayers on GaAs and Si, respectively. Hall mobilities were as high as 128,000, 95,000 and 72,000 cm2/V-sec at 200 K, 77 K, and room temperature, respectively. In addition, 77 K PL linewidths were as low as 18, 20, and 30 meV on GaAs, Si, and sapphire substrates respectively, well below the 48 meV value previously reported in the literature.In collaboration with Lockheed Martin Fairchild Systems (LMFS), IR thermal imaging has been obtained from InSb FPA's on GaAs and Si substrates. This is the first successful IR thermal imaging from heteroepitaxially grown InSb. Because of the high quality substrates, larger areas, and higher yields, this technology is very promising for challenging traditional InSb FPA hybrid technology.

scholarly journals InSb Photodiodes for Monolithic Active Focal Plane Arrays on GaAs Substrates

2016 ◽  
Vol 63 (8) ◽  
pp. 3135-3142 ◽  
Author(s):  
Vincenzo Pusino ◽  
Chengzhi Xie ◽  
Ata Khalid ◽  
Matthew J. Steer ◽  
Marc Sorel ◽  
...  
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays ◽  
Gaas Substrates

Semiconductor YBACUO Uncooled Focal Plane Arrays

2006 ◽  
Author(s):  
Donald Butler ◽  
Zeynep Celik-Bulter
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays

Further Developments in Improved Sensitivity, Low-cost Uncooled IR Detector Focal Plane Arrays

2010 ◽  
Author(s):  
Wendy L. Sarney ◽  
John W. Little ◽  
Kimberley A. Olver ◽  
Frank E. Livingston ◽  
Krisztian Niesz ◽  
...  
Keyword(s):  
Focal Plane ◽  
Low Cost ◽  
Focal Plane Arrays ◽  
Ir Detector

Dependence of the Deformation of 128×128 InSb Focal-plane Arrays on the Silicon Readout Integrated Circuit Thickness

2015 ◽  
Vol 9 (1) ◽  
pp. 170-174 ◽  
Author(s):  
Xiaoling Zhang ◽  
Qingduan Meng ◽  
Liwen Zhang
Keyword(s):  
Thermal Shock ◽  
Indium Antimonide ◽  
Integrated Circuit ◽  
Focal Plane ◽  
Three Dimensional ◽  
Fracture Probability ◽  
Focal Plane Arrays ◽  
Thermal Shock Test ◽  
Readout Integrated Circuit ◽  
Three Dimensional Modeling

The square checkerboard buckling deformation appearing in indium antimonide infrared focal-plane arrays (InSb IRFPAs) subjected to the thermal shock tests, results in the fracturing of the InSb chip, which restricts its final yield. In light of the proposed three-dimensional modeling, we proposed the method of thinning a silicon readout integrated circuit (ROIC) to level the uneven top surface of InSb IRFPAs. Simulation results show that when the silicon ROIC is thinned from 300 μm to 20 μm, the maximal displacement in the InSb IRFPAs linearly decreases from 7.115 μm to 0.670 μm in the upward direction, and also decreases linearly from 14.013 μm to 1.612 μm in the downward direction. Once the thickness of the silicon ROIC is less than 50 μm, the square checkerboard buckling deformation distribution presenting in the thicker InSb IRFPAs disappears, and the top surface of the InSb IRFPAs becomes flat. All these findings imply that the thickness of the silicon ROIC determines the degree of deformation in the InSb IRFPAs under a thermal shock test, that the method of thinning a silicon ROIC is suitable for decreasing the fracture probability of the InSb chip, and that this approach improves the reliability of InSb IRFPAs.

scholarly journals Fabrication of 15-$\mu$ m Pitch $640\times512$ InAs/GaSb Type-II Superlattice Focal Plane Arrays

2019 ◽  
Vol 55 (4) ◽  
pp. 1-5 ◽  
Author(s):  
Fikri Oguz ◽  
Yetkin Arslan ◽  
Erkin Ulker ◽  
Alpan Bek ◽  
Ekmel Ozbay
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays ◽  
Type Ii ◽  
Type Ii Superlattice

Uncooled microbolometer mosaic focal plane arrays for the infrared and terahertz ranges

2016 ◽  
Vol 52 (2) ◽  
pp. 203-209
Author(s):  
M. A. Dem’yanenko ◽  
A. I. Kozlov ◽  
A. R. Novoselov ◽  
V. N. Ovsyuk
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays ◽  
Uncooled Microbolometer
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